Dependence of the 6H - SiC induced amorphization on the ion beam implanted fluence
Нема приказа
Аутори
Erich, MarkoGloginjić, Marko
Mravik, Željko
Vrban, Branislav
Čerba, Štefan
Lüley, Jakub
Nečas, Vladimír
Filová, Vendula
Katovský, Karel
Štastný, Ondrej
Petrović, Srđan M.
Конференцијски прилог (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
6H-SiC samples have been implanted by 4 MeV C and Si ions in the (0001) channeling direction to the sets of multiple implantation fluences. These samples were analyzed via Elastic Backscattering Spectroscopy in the channeling mode (EBS/C) using 1.725 MeV proton beam, from which SiC amorphization depth profiles and averaged integral 6H-SiC amorphization have been obtained. The averaged integral 6H-SiC crystal amorphization vs implanted fluence dependence has been determined for both types of implanted ions. From these dependences, the 6H-SiC integral crystal amorphization vs. implanted fluence/type of implanted atom assessment model have been proposed.
Извор:
27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic, 2023, 2778, 1, 060002-
DOI: 10.1063/5.0136670
ISBN: 978-073544479-9
ISSN: 0094-243X
Scopus: 2-s2.0-85160274951
Институција/група
VinčaTY - CONF AU - Erich, Marko AU - Gloginjić, Marko AU - Mravik, Željko AU - Vrban, Branislav AU - Čerba, Štefan AU - Lüley, Jakub AU - Nečas, Vladimír AU - Filová, Vendula AU - Katovský, Karel AU - Štastný, Ondrej AU - Petrović, Srđan M. PY - 2023 UR - https://vinar.vin.bg.ac.rs/handle/123456789/11068 AB - 6H-SiC samples have been implanted by 4 MeV C and Si ions in the (0001) channeling direction to the sets of multiple implantation fluences. These samples were analyzed via Elastic Backscattering Spectroscopy in the channeling mode (EBS/C) using 1.725 MeV proton beam, from which SiC amorphization depth profiles and averaged integral 6H-SiC amorphization have been obtained. The averaged integral 6H-SiC crystal amorphization vs implanted fluence dependence has been determined for both types of implanted ions. From these dependences, the 6H-SiC integral crystal amorphization vs. implanted fluence/type of implanted atom assessment model have been proposed. C3 - 27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic T1 - Dependence of the 6H - SiC induced amorphization on the ion beam implanted fluence VL - 2778 IS - 1 SP - 060002 DO - 10.1063/5.0136670 ER -
@conference{ author = "Erich, Marko and Gloginjić, Marko and Mravik, Željko and Vrban, Branislav and Čerba, Štefan and Lüley, Jakub and Nečas, Vladimír and Filová, Vendula and Katovský, Karel and Štastný, Ondrej and Petrović, Srđan M.", year = "2023", abstract = "6H-SiC samples have been implanted by 4 MeV C and Si ions in the (0001) channeling direction to the sets of multiple implantation fluences. These samples were analyzed via Elastic Backscattering Spectroscopy in the channeling mode (EBS/C) using 1.725 MeV proton beam, from which SiC amorphization depth profiles and averaged integral 6H-SiC amorphization have been obtained. The averaged integral 6H-SiC crystal amorphization vs implanted fluence dependence has been determined for both types of implanted ions. From these dependences, the 6H-SiC integral crystal amorphization vs. implanted fluence/type of implanted atom assessment model have been proposed.", journal = "27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic", title = "Dependence of the 6H - SiC induced amorphization on the ion beam implanted fluence", volume = "2778", number = "1", pages = "060002", doi = "10.1063/5.0136670" }
Erich, M., Gloginjić, M., Mravik, Ž., Vrban, B., Čerba, Š., Lüley, J., Nečas, V., Filová, V., Katovský, K., Štastný, O.,& Petrović, S. M.. (2023). Dependence of the 6H - SiC induced amorphization on the ion beam implanted fluence. in 27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic, 2778(1), 060002. https://doi.org/10.1063/5.0136670
Erich M, Gloginjić M, Mravik Ž, Vrban B, Čerba Š, Lüley J, Nečas V, Filová V, Katovský K, Štastný O, Petrović SM. Dependence of the 6H - SiC induced amorphization on the ion beam implanted fluence. in 27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic. 2023;2778(1):060002. doi:10.1063/5.0136670 .
Erich, Marko, Gloginjić, Marko, Mravik, Željko, Vrban, Branislav, Čerba, Štefan, Lüley, Jakub, Nečas, Vladimír, Filová, Vendula, Katovský, Karel, Štastný, Ondrej, Petrović, Srđan M., "Dependence of the 6H - SiC induced amorphization on the ion beam implanted fluence" in 27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic, 2778, no. 1 (2023):060002, https://doi.org/10.1063/5.0136670 . .