Sensitivity of Unbiased Commercial P-channel Power VDMOSFETs to X-ray Radiation
Нема приказа
Аутори
Ristić, Goran S.Jevtić, Aleksandar S.
Ilić, Stefan
Dimitrijević, Saša
Veljković, Stanislav
Palma, Alberto J.
Stanković, Srboljub
Anđelković, Marko S.
Конференцијски прилог (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
The effect of X-rays on the p-channel power vertical double diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) was investigated. The VDMOSFETs were irradiated without gate polarization using three different Xray beams. Due to the polyenergetic nature of X-rays, their effect is much more complex than the effect of gamma radiation on transistors. The influence of X-rays on threshold voltage shift $(\Delta V_T)$ and on the creation of fixed traps (FTs) in gate oxide and on switching traps (STs) near and at oxide/semiconductor interface was analyzed. The effect of STs on T is more significant than in the case of y-radiation. The obtained results showed that the sensitivity to radiation depends on the radiation energy, and they are in accordance with the theoretical predictions.
Кључне речи:
Logic gates / Printed circuits / Sensitivity / Silicon compounds / Switches / Threshold voltage / X-raysИзвор:
2021 IEEE 32nd International Conference on Microelectronics (MIEL), 2021, 341-344Финансирање / пројекти:
- Заједничка истраживања мерења и утицаја јонизујућег и УВ зрачења у области медицине и заштите животне средине (RS-MESTD-Integrated and Interdisciplinary Research (IIR or III)-43011)
- ELICSIR - Enhancement of Sceintific Excellence and Innovation Potential in Electronic Instrumentation for Ionising Radiation Environments (EU-H2020-857558)
DOI: 10.1109/MIEL52794.2021.9569096
ISBN: 978-1-6654-4529-0
ISSN: 2159-1660
Scopus: 2-s2.0-85118448524
Колекције
Институција/група
VinčaTY - CONF AU - Ristić, Goran S. AU - Jevtić, Aleksandar S. AU - Ilić, Stefan AU - Dimitrijević, Saša AU - Veljković, Stanislav AU - Palma, Alberto J. AU - Stanković, Srboljub AU - Anđelković, Marko S. PY - 2021 UR - https://vinar.vin.bg.ac.rs/handle/123456789/10021 AB - The effect of X-rays on the p-channel power vertical double diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) was investigated. The VDMOSFETs were irradiated without gate polarization using three different Xray beams. Due to the polyenergetic nature of X-rays, their effect is much more complex than the effect of gamma radiation on transistors. The influence of X-rays on threshold voltage shift $(\Delta V_T)$ and on the creation of fixed traps (FTs) in gate oxide and on switching traps (STs) near and at oxide/semiconductor interface was analyzed. The effect of STs on T is more significant than in the case of y-radiation. The obtained results showed that the sensitivity to radiation depends on the radiation energy, and they are in accordance with the theoretical predictions. C3 - 2021 IEEE 32nd International Conference on Microelectronics (MIEL) T1 - Sensitivity of Unbiased Commercial P-channel Power VDMOSFETs to X-ray Radiation SP - 341 EP - 344 DO - 10.1109/MIEL52794.2021.9569096 ER -
@conference{ author = "Ristić, Goran S. and Jevtić, Aleksandar S. and Ilić, Stefan and Dimitrijević, Saša and Veljković, Stanislav and Palma, Alberto J. and Stanković, Srboljub and Anđelković, Marko S.", year = "2021", abstract = "The effect of X-rays on the p-channel power vertical double diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) was investigated. The VDMOSFETs were irradiated without gate polarization using three different Xray beams. Due to the polyenergetic nature of X-rays, their effect is much more complex than the effect of gamma radiation on transistors. The influence of X-rays on threshold voltage shift $(\Delta V_T)$ and on the creation of fixed traps (FTs) in gate oxide and on switching traps (STs) near and at oxide/semiconductor interface was analyzed. The effect of STs on T is more significant than in the case of y-radiation. The obtained results showed that the sensitivity to radiation depends on the radiation energy, and they are in accordance with the theoretical predictions.", journal = "2021 IEEE 32nd International Conference on Microelectronics (MIEL)", title = "Sensitivity of Unbiased Commercial P-channel Power VDMOSFETs to X-ray Radiation", pages = "341-344", doi = "10.1109/MIEL52794.2021.9569096" }
Ristić, G. S., Jevtić, A. S., Ilić, S., Dimitrijević, S., Veljković, S., Palma, A. J., Stanković, S.,& Anđelković, M. S.. (2021). Sensitivity of Unbiased Commercial P-channel Power VDMOSFETs to X-ray Radiation. in 2021 IEEE 32nd International Conference on Microelectronics (MIEL), 341-344. https://doi.org/10.1109/MIEL52794.2021.9569096
Ristić GS, Jevtić AS, Ilić S, Dimitrijević S, Veljković S, Palma AJ, Stanković S, Anđelković MS. Sensitivity of Unbiased Commercial P-channel Power VDMOSFETs to X-ray Radiation. in 2021 IEEE 32nd International Conference on Microelectronics (MIEL). 2021;:341-344. doi:10.1109/MIEL52794.2021.9569096 .
Ristić, Goran S., Jevtić, Aleksandar S., Ilić, Stefan, Dimitrijević, Saša, Veljković, Stanislav, Palma, Alberto J., Stanković, Srboljub, Anđelković, Marko S., "Sensitivity of Unbiased Commercial P-channel Power VDMOSFETs to X-ray Radiation" in 2021 IEEE 32nd International Conference on Microelectronics (MIEL) (2021):341-344, https://doi.org/10.1109/MIEL52794.2021.9569096 . .