Power Silicon Carbide Schottky Diodes as Current Mode γ - Radiation Detectors
Само за регистроване кориснике
2021
Аутори
Ilić, StefanAnđelković, Marko S.
Carvajal, Miguel A.
Lallena, Antonio M.
Krstić, Miloš
Stanković, Srboljub
Ristić, Goran S.
Конференцијски прилог (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
In this paper, the feasibility of using commercial power Silicon Carbide (SiC) Schottky diodes as a current mode γ-radiation detector have been examined. Diodes with almost identical electric characteristics are purchased from two different manufacturers, On Semiconductor and RoHM. They have been tested under gamma radiation exposure from a Co-60 source. The current response during irradiation has been measured for various dose rates with reversed diode bias. Investigated range of dose rates was from 0.258 Gy/h to 26.312 Gy/h, and reverse diode bias values were 10 V, 20 V, 50 V, 100 V and 200 V. Tested Schottky diodes produce stable current response for the investigated dose rates. Although the manufacturers are different, the results show that the dosimetric characteristics of these diodes have an excellent match. Sensitivity was proportional to the applied reverse bias voltage. A simple power-law can very well describe the dependence of measured radiation-induced current on dose rate....
Кључне речи:
Power measurement / Radiation effects / Schottky diodes / Semiconductor device measurement / Sensitivity / Silicon carbide / Voltage measurementИзвор:
MIEL 2021 : 32nd International Conference on Microelectronics : Proceedings, 2021, 337-340Финансирање / пројекти:
- Министарство науке, технолошког развоја и иновација Републике Србије, институционално финансирање - 200026 (Универзитет у Београду, Институт за хемију, технологију и металургију - ИХТМ) (RS-MESTD-inst-2020-200026)
- Заједничка истраживања мерења и утицаја јонизујућег и УВ зрачења у области медицине и заштите животне средине (RS-MESTD-Integrated and Interdisciplinary Research (IIR or III)-43011)
- European Commission [857558 - ELICSIR, WIDESPREAD-2018-3-TWINNING]
DOI: 10.1109/MIEL52794.2021.9569076
ISBN: 978-1-6654-4528-3
ISSN: 2159-1660
Scopus: 2-s2.0-85118457713
Колекције
Институција/група
VinčaTY - CONF AU - Ilić, Stefan AU - Anđelković, Marko S. AU - Carvajal, Miguel A. AU - Lallena, Antonio M. AU - Krstić, Miloš AU - Stanković, Srboljub AU - Ristić, Goran S. PY - 2021 UR - https://vinar.vin.bg.ac.rs/handle/123456789/10020 AB - In this paper, the feasibility of using commercial power Silicon Carbide (SiC) Schottky diodes as a current mode γ-radiation detector have been examined. Diodes with almost identical electric characteristics are purchased from two different manufacturers, On Semiconductor and RoHM. They have been tested under gamma radiation exposure from a Co-60 source. The current response during irradiation has been measured for various dose rates with reversed diode bias. Investigated range of dose rates was from 0.258 Gy/h to 26.312 Gy/h, and reverse diode bias values were 10 V, 20 V, 50 V, 100 V and 200 V. Tested Schottky diodes produce stable current response for the investigated dose rates. Although the manufacturers are different, the results show that the dosimetric characteristics of these diodes have an excellent match. Sensitivity was proportional to the applied reverse bias voltage. A simple power-law can very well describe the dependence of measured radiation-induced current on dose rate. C3 - MIEL 2021 : 32nd International Conference on Microelectronics : Proceedings T1 - Power Silicon Carbide Schottky Diodes as Current Mode γ - Radiation Detectors SP - 337 EP - 340 DO - 10.1109/MIEL52794.2021.9569076 ER -
@conference{ author = "Ilić, Stefan and Anđelković, Marko S. and Carvajal, Miguel A. and Lallena, Antonio M. and Krstić, Miloš and Stanković, Srboljub and Ristić, Goran S.", year = "2021", abstract = "In this paper, the feasibility of using commercial power Silicon Carbide (SiC) Schottky diodes as a current mode γ-radiation detector have been examined. Diodes with almost identical electric characteristics are purchased from two different manufacturers, On Semiconductor and RoHM. They have been tested under gamma radiation exposure from a Co-60 source. The current response during irradiation has been measured for various dose rates with reversed diode bias. Investigated range of dose rates was from 0.258 Gy/h to 26.312 Gy/h, and reverse diode bias values were 10 V, 20 V, 50 V, 100 V and 200 V. Tested Schottky diodes produce stable current response for the investigated dose rates. Although the manufacturers are different, the results show that the dosimetric characteristics of these diodes have an excellent match. Sensitivity was proportional to the applied reverse bias voltage. A simple power-law can very well describe the dependence of measured radiation-induced current on dose rate.", journal = "MIEL 2021 : 32nd International Conference on Microelectronics : Proceedings", title = "Power Silicon Carbide Schottky Diodes as Current Mode γ - Radiation Detectors", pages = "337-340", doi = "10.1109/MIEL52794.2021.9569076" }
Ilić, S., Anđelković, M. S., Carvajal, M. A., Lallena, A. M., Krstić, M., Stanković, S.,& Ristić, G. S.. (2021). Power Silicon Carbide Schottky Diodes as Current Mode γ - Radiation Detectors. in MIEL 2021 : 32nd International Conference on Microelectronics : Proceedings, 337-340. https://doi.org/10.1109/MIEL52794.2021.9569076
Ilić S, Anđelković MS, Carvajal MA, Lallena AM, Krstić M, Stanković S, Ristić GS. Power Silicon Carbide Schottky Diodes as Current Mode γ - Radiation Detectors. in MIEL 2021 : 32nd International Conference on Microelectronics : Proceedings. 2021;:337-340. doi:10.1109/MIEL52794.2021.9569076 .
Ilić, Stefan, Anđelković, Marko S., Carvajal, Miguel A., Lallena, Antonio M., Krstić, Miloš, Stanković, Srboljub, Ristić, Goran S., "Power Silicon Carbide Schottky Diodes as Current Mode γ - Radiation Detectors" in MIEL 2021 : 32nd International Conference on Microelectronics : Proceedings (2021):337-340, https://doi.org/10.1109/MIEL52794.2021.9569076 . .