Strain-Engineered Metal-to-Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon
Аутори
Chen, BinbinGauquelin, Nicolas
Jannis, Daen
Cunha, Daniel M.
Halisdemir, Ufuk
Piamonteze, Cinthia
Lee, Jin Hong
Belhadi, Jamal
Eltes, Felix
Abel, Stefan
Jovanović, Zoran
Spreitzer, Matjaž
Fompeyrine, Jean
Verbeeck, Johan
Bibes, Manuel
Huijben, Mark
Rijnders, Guus
Koster, Gertjan
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
Epitaxial growth of SrTiO3 (STO) on silicon greatly accelerates the monolithic integration of multifunctional oxides into the mainstream semiconductor electronics. However, oxide superlattices (SLs), the birthplace of many exciting discoveries, remain largely unexplored on silicon. In this work, LaNiO3/LaFeO3 SLs are synthesized on STO-buffered silicon (Si/STO) and STO single-crystal substrates, and their electronic properties are compared using dc transport and X-ray absorption spectroscopy. Both sets of SLs show a similar thickness-driven metal-to-insulator transition, albeit with resistivity and transition temperature modified by the different amounts of strain. In particular, the large tensile strain promotes a pronounced Ni (Formula presented.) orbital polarization for the SL grown on Si/STO, comparable to that reported for LaNiO3 SL epitaxially strained to DyScO3 substrate. Those results illustrate the ability to integrate oxide SLs on silicon with structure and property approach...ing their counterparts grown on STO single crystal, and also open up new prospects of strain engineering in functional oxides based on the Si platform. © 2020 The Authors. Advanced Materials published by Wiley-VCH GmbH
Кључне речи:
metal-to-insulator transition / nickelate superlattices / orbital polarization / silicon / strainИзвор:
Advanced Materials, 2020Финансирање / пројекти:
- SIOX [project 4288]
- ERC CoG MINT [615759]
- Slovenian Research Agency [No. J2-9237, P2-0091]
- GOA project “Solarpaint” of the University of Antwerp
- Horizon 2020 [23717 - ESTEEM3]
- Horizon 2020 project ULPEC [732642]
DOI: 10.1002/adma.202004995
ISSN: 0935-9648
PubMed: 33175414
WoS: 000588146500001
Scopus: 2-s2.0-85096664143
Колекције
Институција/група
VinčaTY - JOUR AU - Chen, Binbin AU - Gauquelin, Nicolas AU - Jannis, Daen AU - Cunha, Daniel M. AU - Halisdemir, Ufuk AU - Piamonteze, Cinthia AU - Lee, Jin Hong AU - Belhadi, Jamal AU - Eltes, Felix AU - Abel, Stefan AU - Jovanović, Zoran AU - Spreitzer, Matjaž AU - Fompeyrine, Jean AU - Verbeeck, Johan AU - Bibes, Manuel AU - Huijben, Mark AU - Rijnders, Guus AU - Koster, Gertjan PY - 2020 UR - https://vinar.vin.bg.ac.rs/handle/123456789/9759 AB - Epitaxial growth of SrTiO3 (STO) on silicon greatly accelerates the monolithic integration of multifunctional oxides into the mainstream semiconductor electronics. However, oxide superlattices (SLs), the birthplace of many exciting discoveries, remain largely unexplored on silicon. In this work, LaNiO3/LaFeO3 SLs are synthesized on STO-buffered silicon (Si/STO) and STO single-crystal substrates, and their electronic properties are compared using dc transport and X-ray absorption spectroscopy. Both sets of SLs show a similar thickness-driven metal-to-insulator transition, albeit with resistivity and transition temperature modified by the different amounts of strain. In particular, the large tensile strain promotes a pronounced Ni (Formula presented.) orbital polarization for the SL grown on Si/STO, comparable to that reported for LaNiO3 SL epitaxially strained to DyScO3 substrate. Those results illustrate the ability to integrate oxide SLs on silicon with structure and property approaching their counterparts grown on STO single crystal, and also open up new prospects of strain engineering in functional oxides based on the Si platform. © 2020 The Authors. Advanced Materials published by Wiley-VCH GmbH T2 - Advanced Materials T1 - Strain-Engineered Metal-to-Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon DO - 10.1002/adma.202004995 ER -
@article{ author = "Chen, Binbin and Gauquelin, Nicolas and Jannis, Daen and Cunha, Daniel M. and Halisdemir, Ufuk and Piamonteze, Cinthia and Lee, Jin Hong and Belhadi, Jamal and Eltes, Felix and Abel, Stefan and Jovanović, Zoran and Spreitzer, Matjaž and Fompeyrine, Jean and Verbeeck, Johan and Bibes, Manuel and Huijben, Mark and Rijnders, Guus and Koster, Gertjan", year = "2020", abstract = "Epitaxial growth of SrTiO3 (STO) on silicon greatly accelerates the monolithic integration of multifunctional oxides into the mainstream semiconductor electronics. However, oxide superlattices (SLs), the birthplace of many exciting discoveries, remain largely unexplored on silicon. In this work, LaNiO3/LaFeO3 SLs are synthesized on STO-buffered silicon (Si/STO) and STO single-crystal substrates, and their electronic properties are compared using dc transport and X-ray absorption spectroscopy. Both sets of SLs show a similar thickness-driven metal-to-insulator transition, albeit with resistivity and transition temperature modified by the different amounts of strain. In particular, the large tensile strain promotes a pronounced Ni (Formula presented.) orbital polarization for the SL grown on Si/STO, comparable to that reported for LaNiO3 SL epitaxially strained to DyScO3 substrate. Those results illustrate the ability to integrate oxide SLs on silicon with structure and property approaching their counterparts grown on STO single crystal, and also open up new prospects of strain engineering in functional oxides based on the Si platform. © 2020 The Authors. Advanced Materials published by Wiley-VCH GmbH", journal = "Advanced Materials", title = "Strain-Engineered Metal-to-Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon", doi = "10.1002/adma.202004995" }
Chen, B., Gauquelin, N., Jannis, D., Cunha, D. M., Halisdemir, U., Piamonteze, C., Lee, J. H., Belhadi, J., Eltes, F., Abel, S., Jovanović, Z., Spreitzer, M., Fompeyrine, J., Verbeeck, J., Bibes, M., Huijben, M., Rijnders, G.,& Koster, G.. (2020). Strain-Engineered Metal-to-Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon. in Advanced Materials. https://doi.org/10.1002/adma.202004995
Chen B, Gauquelin N, Jannis D, Cunha DM, Halisdemir U, Piamonteze C, Lee JH, Belhadi J, Eltes F, Abel S, Jovanović Z, Spreitzer M, Fompeyrine J, Verbeeck J, Bibes M, Huijben M, Rijnders G, Koster G. Strain-Engineered Metal-to-Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon. in Advanced Materials. 2020;. doi:10.1002/adma.202004995 .
Chen, Binbin, Gauquelin, Nicolas, Jannis, Daen, Cunha, Daniel M., Halisdemir, Ufuk, Piamonteze, Cinthia, Lee, Jin Hong, Belhadi, Jamal, Eltes, Felix, Abel, Stefan, Jovanović, Zoran, Spreitzer, Matjaž, Fompeyrine, Jean, Verbeeck, Johan, Bibes, Manuel, Huijben, Mark, Rijnders, Guus, Koster, Gertjan, "Strain-Engineered Metal-to-Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon" in Advanced Materials (2020), https://doi.org/10.1002/adma.202004995 . .