Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry
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© 2019 IEEE
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In this paper we investigated the feasibility of using a commercial programmable floating-gate MOS transistor (EPAD) as a radiation dosimeter. The results show that EPAD with zero bias have the sensitivity of 9.2 mV/Gy and low fading. EPADs with a higher initial threshold voltage show very good linearity with the radiation dose. After its annealing at 70 °C there is a visible recovery of transfer characteristics due to a parasitic parallel resistive path that occurs during irradiation. Apart from that, the threshold voltage is slightly recovered. The programming time of an EPAD increases with the absorbed dose and depends on gate biasing during irradiation. © 2019 IEEE.
Извор:
2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings, 2019, 67-70Издавач:
- IEEE
Финансирање / пројекти:
- Карактеризација, анализа и моделовање физичких појава у танким слојевима за примену у MOS нанокомпонентама (RS-171026)
- Развој, оптимизација и примена технологија самонапајајућих сензора (RS-32026)
Напомена:
- 31st IEEE International Conference on Microelectronics, MIEL 2019; 16-18. September 2019; Conference Code:153916
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Институција/група
VinčaTY - CONF AU - Ilić, S. AU - Jevtić, A. AU - Stanković, Srboljub AU - Davidović, Vojkan S. PY - 2019 UR - https://vinar.vin.bg.ac.rs/handle/123456789/8657 AB - In this paper we investigated the feasibility of using a commercial programmable floating-gate MOS transistor (EPAD) as a radiation dosimeter. The results show that EPAD with zero bias have the sensitivity of 9.2 mV/Gy and low fading. EPADs with a higher initial threshold voltage show very good linearity with the radiation dose. After its annealing at 70 °C there is a visible recovery of transfer characteristics due to a parasitic parallel resistive path that occurs during irradiation. Apart from that, the threshold voltage is slightly recovered. The programming time of an EPAD increases with the absorbed dose and depends on gate biasing during irradiation. © 2019 IEEE. PB - IEEE C3 - 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings T1 - Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry SP - 67 EP - 70 DO - 10.1109/MIEL.2019.8889570 ER -
@conference{ author = "Ilić, S. and Jevtić, A. and Stanković, Srboljub and Davidović, Vojkan S.", year = "2019", abstract = "In this paper we investigated the feasibility of using a commercial programmable floating-gate MOS transistor (EPAD) as a radiation dosimeter. The results show that EPAD with zero bias have the sensitivity of 9.2 mV/Gy and low fading. EPADs with a higher initial threshold voltage show very good linearity with the radiation dose. After its annealing at 70 °C there is a visible recovery of transfer characteristics due to a parasitic parallel resistive path that occurs during irradiation. Apart from that, the threshold voltage is slightly recovered. The programming time of an EPAD increases with the absorbed dose and depends on gate biasing during irradiation. © 2019 IEEE.", publisher = "IEEE", journal = "2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings", title = "Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry", pages = "67-70", doi = "10.1109/MIEL.2019.8889570" }
Ilić, S., Jevtić, A., Stanković, S.,& Davidović, V. S.. (2019). Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry. in 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings IEEE., 67-70. https://doi.org/10.1109/MIEL.2019.8889570
Ilić S, Jevtić A, Stanković S, Davidović VS. Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry. in 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings. 2019;:67-70. doi:10.1109/MIEL.2019.8889570 .
Ilić, S., Jevtić, A., Stanković, Srboljub, Davidović, Vojkan S., "Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry" in 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings (2019):67-70, https://doi.org/10.1109/MIEL.2019.8889570 . .