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dc.creatorRadisavljević, Ivana
dc.creatorNovaković, Nikola
dc.creatorRomčević, Nebojša Ž.
dc.creatorMitrić, Miodrag
dc.creatorKuzmanović, Bojana
dc.creatorBojanic, Slobodan
dc.creatorIvanović, Nenad
dc.date.accessioned2018-03-01T16:33:29Z
dc.date.available2018-03-01T16:33:29Z
dc.date.issued2015
dc.identifier.issn0254-0584 (print)
dc.identifier.issn1879-3312 (electronic)
dc.identifier.urihttp://vinar.vin.bg.ac.rs/handle/123456789/840
dc.description.abstractLocal electronic and structural features around Mn in Cd1-xMnxTe0.97Se0.03 (x = 0.02; 0.05; 0.1; y = 0.03) were studied by means of X-ray Absorption Fine Structure (XAFS) techniques. Manganese ions with an average valence 2+, are found to be well incorporated into the host CdTe lattice, with clear preference for Te atoms as the first neighbors. However, Mn and Te are found to form two essentially different types of bonds, one short, strong and directional (cubic MnTe-alike bond), and three much longer, predominantly ionic in nature (hexagonal MnTe-alike bonds), thereby distorting the tetrahedral coordination around Mn. The origin of peculiar Mn Te bonds distribution and details of their nature and strength are further elaborated by employing the first principle electronic structure calculations. That way a thorough insight in impact of the Mn Te bond length variation on the electronic structure of the compound is obtained. The relations established between the local structures and electronic properties offer a reliable procedure for detailed analysis of the structural and electronic consequences of the 3d-transition metals (TM) incorporation in II-VI semiconductor host. Clear distinction between various influences makes the procedure easily adoptable also to the studies of TM impurities in other semiconductors. (C) 2015 Elsevier B.V. All rights reserved.en
dc.relationinfo:eu-repo/grantAgreement/MESTD/Integrated and Interdisciplinary Research (IIR or III)/45003/RS//
dc.relationinfo:eu-repo/grantAgreement/EC/FP7/226716/EU//
dc.relationHASYLAB ' DESY [I-20100379 EC]
dc.rightsrestrictedAccessen
dc.sourceMaterials Chemistry and Physicsen
dc.subjectSemiconductorsen
dc.subjectXAFSen
dc.subjectab initio calculationsen
dc.subjectElectronic structureen
dc.titleElectronic aspects of formation and properties of local structures around Mn in Cd1-xMnxTe1-ySeyen
dc.typearticleen
dcterms.abstractМитрић Миодраг; Новаковић Никола; Бојаниц, Слободан; Радисављевиц, Ивана; Ромцевиц, Небојса; Ивановић Ненад; Кузмановић Бојана;
dc.citation.volume167
dc.citation.spage236
dc.citation.epage245
dc.identifier.wos000366070500033
dc.identifier.doi10.1016/j.matchemphys.2015.10.038
dc.citation.rankM21
dc.identifier.scopus2-s2.0-84959870256


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