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dc.creatorObrenović, Marija D.
dc.creatorPejović, Milić M.
dc.creatorLazarević, Đorđe R.
dc.creatorKartalović, Nenad M.
dc.date.accessioned2018-07-31T12:17:58Z
dc.date.available2018-07-31T12:17:58Z
dc.date.issued2018
dc.identifier.issn1451-3994 (print)
dc.identifier.urihttp://www.doiserbia.nb.rs/Article.aspx?ID=1451-39941801081O
dc.identifier.urihttp://vinar.vin.bg.ac.rs/123456789/7784
dc.description.abstractThe variations in the threshold voltage shift in p-channel power VDMOSFET during the gamma ray irradiation was investigated in the dose range from 10 to 100 Gy. The investigations were performed without the gate bias and with 5 V gate bias. The devices with 5 V gate bias exhibit a linear dependence between the threshold voltage shift and the radiation dose. The densities of radiation-induced fixed and switching traps were determined from the sub-threshold I-V characteristics using the midgap technique. It was shown that the creation of fixed traps is dominant during the irradiation. The possible mechanisms responsible for the fixed and switching traps creation are also analyzed in this paper.en
dc.relationinfo:eu-repo/grantAgreement/MESTD/Basic Research (BR or ON)/171007/RS//
dc.rightsopenAccess
dc.sourceNuclear Technology and Radiation Protection
dc.subjectVDMOSFET
dc.subjectgamma ray irradiationen
dc.subjectradiation doseen
dc.subjectthreshold voltage shiften
dc.titleThe effects induced by the gamma-ray responsible for the threshold voltage shift of commercial p-channel power VDMOSFETen
dc.typearticleen
dc.rights.licenseBY-NC-ND
dcterms.abstractОбреновић, Марија Д.; Пејовић, Милић М.; Лазаревић, Ђорђе Р.; Карталовић, Ненад М.;
dc.citation.volume33
dc.citation.issue1
dc.citation.spage81
dc.citation.epage86
dc.identifier.wos000436369300009
dc.identifier.doi10.2298/NTRP1801081O
dc.type.versionpublishedVersion
dc.identifier.fulltexthttp://vinar.vin.bg.ac.rs/bitstream/handle/123456789/7784/1451-39941801081O.pdf


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