Ion-beam irradiation effects on reactively sputtered CrN layers
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This paper presents a study of microstructural changes induced in CrN layers by irradiation with 120 keV argon ions. The layers were deposited on (100) Si wafers, at different nitrogen partial pressures (2×10^-4, 3.5×10^-4 and 5×10^-4 mbar), to a total thickness of 260–280 nm. During deposition the substrates were held at 150°C. After deposition the samples were irradiated with argon ions to the fluences of 1×10^15 and 1×10^16 ions/cm2, under the vacuum of 7×10^-6 mbar. Characterisation of the samples structure and morphology were performed by X-ray diffraction (XRD) analysis and cross-sectional transmission electron microscopy (XTEM), and the concentration profiles were determined by Rutheford backscattering (RBS) spectrometry. It was found that the layer composition strongly depends on the nitrogen partial pressure during deposition. A pure stoichiometric CrN phase was achieved for the highest nitrogen partial pressure (5×10^-4 mbar). Argon ions irradiation induces microstructural ch...anges in the CrN layers such as variation of the lattice constants, micro-strain and mean grain size.
Кључне речи:
CrN / ion implantation / thin films / TEM analysisИзвор:
Processing and Application of Ceramics, 2011, 5, 1, 25-29Финансирање / пројекти:
- Модификација, синтеза и анализа наноструктурних материјала јонским сноповима, гама зрачењем и вакуумским депоновањем (RS-MESTD-MPN2006-2010-141013)
Напомена:
- Paper presented at 4th Serbian Conference on Electron Microscopy, Belgrade, Serbia, 2010
URI
https://doaj.org/article/e0d5a6877a4c44e58de76121026415e7https://vinar.vin.bg.ac.rs/handle/123456789/7703
Колекције
Институција/група
VinčaTY - JOUR AU - Novaković, Mirjana M. AU - Popović, Maja AU - Bibić, Nataša M. PY - 2011 UR - https://doaj.org/article/e0d5a6877a4c44e58de76121026415e7 UR - https://vinar.vin.bg.ac.rs/handle/123456789/7703 AB - This paper presents a study of microstructural changes induced in CrN layers by irradiation with 120 keV argon ions. The layers were deposited on (100) Si wafers, at different nitrogen partial pressures (2×10^-4, 3.5×10^-4 and 5×10^-4 mbar), to a total thickness of 260–280 nm. During deposition the substrates were held at 150°C. After deposition the samples were irradiated with argon ions to the fluences of 1×10^15 and 1×10^16 ions/cm2, under the vacuum of 7×10^-6 mbar. Characterisation of the samples structure and morphology were performed by X-ray diffraction (XRD) analysis and cross-sectional transmission electron microscopy (XTEM), and the concentration profiles were determined by Rutheford backscattering (RBS) spectrometry. It was found that the layer composition strongly depends on the nitrogen partial pressure during deposition. A pure stoichiometric CrN phase was achieved for the highest nitrogen partial pressure (5×10^-4 mbar). Argon ions irradiation induces microstructural changes in the CrN layers such as variation of the lattice constants, micro-strain and mean grain size. T2 - Processing and Application of Ceramics T1 - Ion-beam irradiation effects on reactively sputtered CrN layers VL - 5 IS - 1 SP - 25 EP - 29 DO - 10.2298/PAC1101025N ER -
@article{ author = "Novaković, Mirjana M. and Popović, Maja and Bibić, Nataša M.", year = "2011", abstract = "This paper presents a study of microstructural changes induced in CrN layers by irradiation with 120 keV argon ions. The layers were deposited on (100) Si wafers, at different nitrogen partial pressures (2×10^-4, 3.5×10^-4 and 5×10^-4 mbar), to a total thickness of 260–280 nm. During deposition the substrates were held at 150°C. After deposition the samples were irradiated with argon ions to the fluences of 1×10^15 and 1×10^16 ions/cm2, under the vacuum of 7×10^-6 mbar. Characterisation of the samples structure and morphology were performed by X-ray diffraction (XRD) analysis and cross-sectional transmission electron microscopy (XTEM), and the concentration profiles were determined by Rutheford backscattering (RBS) spectrometry. It was found that the layer composition strongly depends on the nitrogen partial pressure during deposition. A pure stoichiometric CrN phase was achieved for the highest nitrogen partial pressure (5×10^-4 mbar). Argon ions irradiation induces microstructural changes in the CrN layers such as variation of the lattice constants, micro-strain and mean grain size.", journal = "Processing and Application of Ceramics", title = "Ion-beam irradiation effects on reactively sputtered CrN layers", volume = "5", number = "1", pages = "25-29", doi = "10.2298/PAC1101025N" }
Novaković, M. M., Popović, M.,& Bibić, N. M.. (2011). Ion-beam irradiation effects on reactively sputtered CrN layers. in Processing and Application of Ceramics, 5(1), 25-29. https://doi.org/10.2298/PAC1101025N
Novaković MM, Popović M, Bibić NM. Ion-beam irradiation effects on reactively sputtered CrN layers. in Processing and Application of Ceramics. 2011;5(1):25-29. doi:10.2298/PAC1101025N .
Novaković, Mirjana M., Popović, Maja, Bibić, Nataša M., "Ion-beam irradiation effects on reactively sputtered CrN layers" in Processing and Application of Ceramics, 5, no. 1 (2011):25-29, https://doi.org/10.2298/PAC1101025N . .