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Ion-beam irradiation effects on reactively sputtered CrN layers

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2011
Novaković_2011_Ion-beam_irradiation_effects.pdf (842.2Kb)
Аутори
Novaković, Mirjana M.
Popović, Maja
Bibić, Nataša M.
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документу
Апстракт
This paper presents a study of microstructural changes induced in CrN layers by irradiation with 120 keV argon ions. The layers were deposited on (100) Si wafers, at different nitrogen partial pressures (2×10^-4, 3.5×10^-4 and 5×10^-4 mbar), to a total thickness of 260–280 nm. During deposition the substrates were held at 150°C. After deposition the samples were irradiated with argon ions to the fluences of 1×10^15 and 1×10^16 ions/cm2, under the vacuum of 7×10^-6 mbar. Characterisation of the samples structure and morphology were performed by X-ray diffraction (XRD) analysis and cross-sectional transmission electron microscopy (XTEM), and the concentration profiles were determined by Rutheford backscattering (RBS) spectrometry. It was found that the layer composition strongly depends on the nitrogen partial pressure during deposition. A pure stoichiometric CrN phase was achieved for the highest nitrogen partial pressure (5×10^-4 mbar). Argon ions irradiation induces microstructural ch...anges in the CrN layers such as variation of the lattice constants, micro-strain and mean grain size.

Кључне речи:
CrN / ion implantation / thin films / TEM analysis
Извор:
Processing and Application of Ceramics, 2011, 5, 1, 25-29
Пројекти:
  • Модификација, синтеза и анализа наноструктурних материјала јонским сноповима, гама зрачењем и вакуумским депоновањем (RS-141013)
Напомена:
  • Paper presented at 4th Serbian Conference on Electron Microscopy, Belgrade, Serbia, 2010

DOI: 10.2298/PAC1101025N

ISSN: 1820-6131 (print); 2406-1034 (electronic)

[ Google Scholar ]
URI
https://doaj.org/article/e0d5a6877a4c44e58de76121026415e7
http://vinar.vin.bg.ac.rs/123456789/7703
Колекције
  • Radovi istraživača
Институција
Vinča

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