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dc.creatorDramićanin, Miroslav
dc.creatorRistovski, Zoran
dc.creatorNikolić, Pantelija
dc.creatorVasiljević, D.
dc.creatorTodorović, D.
dc.date.accessioned2018-03-06T09:35:03Z
dc.date.available2018-03-06T09:35:03Z
dc.date.issued1995
dc.identifier.issn1098-0121
dc.identifier.urihttp://dais.sanu.ac.rs/123456789/569
dc.identifier.urihttp://www.itn.sanu.ac.rs/opus4/frontdoor/index/index/docId/837
dc.identifier.urihttp://vinar.vin.bg.ac.rs/handle/123456789/7480
dc.description.abstractPhotoacoustic (PA) heat-transmission measurements were used to study transport in a nearly intrinsic Ge single crystal. A theoretical model was developed which quantitatively describes excess carrier and thermal-wave space distributions, within the semiconductor under monochromatic cw modulated excitation. The PA heat-transmission, reflection, and photothermal-beam-deflection signals can be calculated using this model. It is shown that the frequency characteristic of the measurement system can be eliminated using measurements on different thicknesses of the same sample. It is also shown that both the normalized phase and amplitude spectra, as a function of the modulation frequency, can be used to determine the values of the thermal diffusivity, the excess-carrier lifetime, and the surface recombination velocity.en
dc.format51 (1995) 14226-14232
dc.languageen
dc.publisherThe American Physical Society
dc.rightsrestrictedAccess
dc.sourcePhysical Review Ben
dc.subjectphotoacoustic measurements
dc.subjectheat-transmission
dc.subjectsemiconductors
dc.subjectGe single crystal
dc.titlePhotoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystalen
dc.typearticle
dc.rights.licenseARR
dcterms.abstractТодоровић, Д.; Васиљевић, Д.; Ристовски, З.; Николић, Пантелија; Драмићанин, Мирослав;
dc.citation.spage14226
dc.citation.epage14232
dc.identifier.doi10.1103/PhysRevB.51.14226
dc.identifier.scopus2-s2.0-0001434307


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