Numerical Simulations of Pulsed Power Electronic Components Radiation Hardness
Апстракт
An increasing degree of both semiconductor components miniaturization and electromagnetic contamination of the environment brings into question the reliability of modern electronic devices. This is particularly emphasized in the functioning conditions of electronic devices related to: nuclear power facilities, medical devices based on nuclear particle and x-ray radiation and the impulse power device. At the same time, non-resistance of semiconductor components to the effects of particle and electromagnetic radiation represents the basic limitation of the expected development of nanoelectronic components. Since the most commonly used material for manufacturing semiconductor components is monocrystalline silicon, it is of great significance to be aware of the influence of nuclear particle and electromagnetic radiation on its relevant. Based on the well-known effects of nuclear (particle) interactions and electromagnetic radiation, the biggest influence on the electrical characteristics o...f monocrystalline silicon should be expected from neutron (n), x-ray (x) and gamma (gamma) radiation. The evaluation of such influence is often carried out (for economic and security reasons) by simulating the effect of radiation interaction with the material, applying the Monte Carlo method (numerical experiments). The aim of this paper is to evaluate the application of the Monte Carlo method for this class of problems. For this purpose, the effect of n, x and gamma radiation on the electrical characteristics of monocrystalline silicon will be determined, under the well-controlled laboratory conditions. The parameters of the experiment are energy and radiation dose. Electric characteristics of monocrystalline silicon are determined using the four-point method and the thermal method. The corresponding numerical experiments will be conducted simultaneously with these laboratory experiments. On the basis of already obtained statistical samples (laboratory and numerical experiments), the testing of both correlation and regression between them will be carried out. The results will provide an answer to the question concerning the feasibility of the Monte Carlo method for the described class of problems
Кључне речи:
radiation hardness / Monte-Carlo simulationsИзвор:
PPC 2015 : IEEE Pulsed Power Conference : Proceedings, 2015, 7296954-Издавач:
- IEEE : Institute of Electrical and Electronics Engineers
Напомена:
- 2015 IEEE Pulsed Power Conference (PPC), Proceedings, May 31-Jun 04, 2015, Austin, TX
DOI: 10.1109/PPC.2015.7296954
ISBN: 978-1-4799-8403-9
ISSN: 2158-4923
WoS: 000380434000113
Scopus: 2-s2.0-84953455503
Колекције
Институција/група
VinčaTY - CONF AU - Obrenović, Marija D. AU - Lazarević, Đorđe R. AU - Stanković, Srboljub AU - Osmokrović, Predrag V. PY - 2015 UR - https://vinar.vin.bg.ac.rs/handle/123456789/7105 AB - An increasing degree of both semiconductor components miniaturization and electromagnetic contamination of the environment brings into question the reliability of modern electronic devices. This is particularly emphasized in the functioning conditions of electronic devices related to: nuclear power facilities, medical devices based on nuclear particle and x-ray radiation and the impulse power device. At the same time, non-resistance of semiconductor components to the effects of particle and electromagnetic radiation represents the basic limitation of the expected development of nanoelectronic components. Since the most commonly used material for manufacturing semiconductor components is monocrystalline silicon, it is of great significance to be aware of the influence of nuclear particle and electromagnetic radiation on its relevant. Based on the well-known effects of nuclear (particle) interactions and electromagnetic radiation, the biggest influence on the electrical characteristics of monocrystalline silicon should be expected from neutron (n), x-ray (x) and gamma (gamma) radiation. The evaluation of such influence is often carried out (for economic and security reasons) by simulating the effect of radiation interaction with the material, applying the Monte Carlo method (numerical experiments). The aim of this paper is to evaluate the application of the Monte Carlo method for this class of problems. For this purpose, the effect of n, x and gamma radiation on the electrical characteristics of monocrystalline silicon will be determined, under the well-controlled laboratory conditions. The parameters of the experiment are energy and radiation dose. Electric characteristics of monocrystalline silicon are determined using the four-point method and the thermal method. The corresponding numerical experiments will be conducted simultaneously with these laboratory experiments. On the basis of already obtained statistical samples (laboratory and numerical experiments), the testing of both correlation and regression between them will be carried out. The results will provide an answer to the question concerning the feasibility of the Monte Carlo method for the described class of problems PB - IEEE : Institute of Electrical and Electronics Engineers C3 - PPC 2015 : IEEE Pulsed Power Conference : Proceedings T1 - Numerical Simulations of Pulsed Power Electronic Components Radiation Hardness SP - 7296954 DO - 10.1109/PPC.2015.7296954 UR - https://hdl.handle.net/21.15107/rcub_vinar_7105 ER -
@conference{ author = "Obrenović, Marija D. and Lazarević, Đorđe R. and Stanković, Srboljub and Osmokrović, Predrag V.", year = "2015", abstract = "An increasing degree of both semiconductor components miniaturization and electromagnetic contamination of the environment brings into question the reliability of modern electronic devices. This is particularly emphasized in the functioning conditions of electronic devices related to: nuclear power facilities, medical devices based on nuclear particle and x-ray radiation and the impulse power device. At the same time, non-resistance of semiconductor components to the effects of particle and electromagnetic radiation represents the basic limitation of the expected development of nanoelectronic components. Since the most commonly used material for manufacturing semiconductor components is monocrystalline silicon, it is of great significance to be aware of the influence of nuclear particle and electromagnetic radiation on its relevant. Based on the well-known effects of nuclear (particle) interactions and electromagnetic radiation, the biggest influence on the electrical characteristics of monocrystalline silicon should be expected from neutron (n), x-ray (x) and gamma (gamma) radiation. The evaluation of such influence is often carried out (for economic and security reasons) by simulating the effect of radiation interaction with the material, applying the Monte Carlo method (numerical experiments). The aim of this paper is to evaluate the application of the Monte Carlo method for this class of problems. For this purpose, the effect of n, x and gamma radiation on the electrical characteristics of monocrystalline silicon will be determined, under the well-controlled laboratory conditions. The parameters of the experiment are energy and radiation dose. Electric characteristics of monocrystalline silicon are determined using the four-point method and the thermal method. The corresponding numerical experiments will be conducted simultaneously with these laboratory experiments. On the basis of already obtained statistical samples (laboratory and numerical experiments), the testing of both correlation and regression between them will be carried out. The results will provide an answer to the question concerning the feasibility of the Monte Carlo method for the described class of problems", publisher = "IEEE : Institute of Electrical and Electronics Engineers", journal = "PPC 2015 : IEEE Pulsed Power Conference : Proceedings", title = "Numerical Simulations of Pulsed Power Electronic Components Radiation Hardness", pages = "7296954", doi = "10.1109/PPC.2015.7296954", url = "https://hdl.handle.net/21.15107/rcub_vinar_7105" }
Obrenović, M. D., Lazarević, Đ. R., Stanković, S.,& Osmokrović, P. V.. (2015). Numerical Simulations of Pulsed Power Electronic Components Radiation Hardness. in PPC 2015 : IEEE Pulsed Power Conference : Proceedings IEEE : Institute of Electrical and Electronics Engineers., 7296954. https://doi.org/10.1109/PPC.2015.7296954 https://hdl.handle.net/21.15107/rcub_vinar_7105
Obrenović MD, Lazarević ĐR, Stanković S, Osmokrović PV. Numerical Simulations of Pulsed Power Electronic Components Radiation Hardness. in PPC 2015 : IEEE Pulsed Power Conference : Proceedings. 2015;:7296954. doi:10.1109/PPC.2015.7296954 https://hdl.handle.net/21.15107/rcub_vinar_7105 .
Obrenović, Marija D., Lazarević, Đorđe R., Stanković, Srboljub, Osmokrović, Predrag V., "Numerical Simulations of Pulsed Power Electronic Components Radiation Hardness" in PPC 2015 : IEEE Pulsed Power Conference : Proceedings (2015):7296954, https://doi.org/10.1109/PPC.2015.7296954 ., https://hdl.handle.net/21.15107/rcub_vinar_7105 .