Raman spectroscopy of graphene: doping and mapping
Нема приказа
Аутори
Stojanović, DankaMatkovic, A.
Askrabic, S.
Beltaos, A.
Ralević, Uroš
Jovanović, Đorđe
Bajuk-Bogdanović, Danica V.
Holclajtner-Antunović, Ivanka D.
Gajic, R.
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
In this study, graphene samples prepared by mechanical exfoliation were examined by Raman spectroscopy. The Au electrical contacts, fabricated using photolithography, allowed the application of a gate voltage between graphene and the Si substrate. In the Raman spectra of the sample, we observed shifts of position, changes of intensity and the width variations of the G and 2D peaks with the change of the gate voltage. Spatial Raman mapping of the samples was performed showing variations in intensities of the Raman peaks in different flake regions.
Извор:
Physica Scripta, 2013, T157Финансирање / пројекти:
- Физика уређених наноструктура и нових материјала у фотоници (RS-171005)
- Наноструктурни мултифункционални материјали и нанокомпозити (RS-45018)
- European Community [228637 NIM NIL]
Напомена:
- 3rd International Conference on the Physics of Optical Materials and Devices, Sep 02-06, 2012, Belgrade, Serbia
DOI: 10.1088/0031-8949/2013/T157/014010
ISSN: 0031-8949; 1402-4896
WoS: 000332504600011
Scopus: 2-s2.0-84891842189
Колекције
Институција/група
VinčaTY - JOUR AU - Stojanović, Danka AU - Matkovic, A. AU - Askrabic, S. AU - Beltaos, A. AU - Ralević, Uroš AU - Jovanović, Đorđe AU - Bajuk-Bogdanović, Danica V. AU - Holclajtner-Antunović, Ivanka D. AU - Gajic, R. PY - 2013 UR - https://vinar.vin.bg.ac.rs/handle/123456789/7017 AB - In this study, graphene samples prepared by mechanical exfoliation were examined by Raman spectroscopy. The Au electrical contacts, fabricated using photolithography, allowed the application of a gate voltage between graphene and the Si substrate. In the Raman spectra of the sample, we observed shifts of position, changes of intensity and the width variations of the G and 2D peaks with the change of the gate voltage. Spatial Raman mapping of the samples was performed showing variations in intensities of the Raman peaks in different flake regions. T2 - Physica Scripta T1 - Raman spectroscopy of graphene: doping and mapping VL - T157 DO - 10.1088/0031-8949/2013/T157/014010 ER -
@article{ author = "Stojanović, Danka and Matkovic, A. and Askrabic, S. and Beltaos, A. and Ralević, Uroš and Jovanović, Đorđe and Bajuk-Bogdanović, Danica V. and Holclajtner-Antunović, Ivanka D. and Gajic, R.", year = "2013", abstract = "In this study, graphene samples prepared by mechanical exfoliation were examined by Raman spectroscopy. The Au electrical contacts, fabricated using photolithography, allowed the application of a gate voltage between graphene and the Si substrate. In the Raman spectra of the sample, we observed shifts of position, changes of intensity and the width variations of the G and 2D peaks with the change of the gate voltage. Spatial Raman mapping of the samples was performed showing variations in intensities of the Raman peaks in different flake regions.", journal = "Physica Scripta", title = "Raman spectroscopy of graphene: doping and mapping", volume = "T157", doi = "10.1088/0031-8949/2013/T157/014010" }
Stojanović, D., Matkovic, A., Askrabic, S., Beltaos, A., Ralević, U., Jovanović, Đ., Bajuk-Bogdanović, D. V., Holclajtner-Antunović, I. D.,& Gajic, R.. (2013). Raman spectroscopy of graphene: doping and mapping. in Physica Scripta, T157. https://doi.org/10.1088/0031-8949/2013/T157/014010
Stojanović D, Matkovic A, Askrabic S, Beltaos A, Ralević U, Jovanović Đ, Bajuk-Bogdanović DV, Holclajtner-Antunović ID, Gajic R. Raman spectroscopy of graphene: doping and mapping. in Physica Scripta. 2013;T157. doi:10.1088/0031-8949/2013/T157/014010 .
Stojanović, Danka, Matkovic, A., Askrabic, S., Beltaos, A., Ralević, Uroš, Jovanović, Đorđe, Bajuk-Bogdanović, Danica V., Holclajtner-Antunović, Ivanka D., Gajic, R., "Raman spectroscopy of graphene: doping and mapping" in Physica Scripta, T157 (2013), https://doi.org/10.1088/0031-8949/2013/T157/014010 . .