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Irradiation induced formation of VN in CrN thin films

dc.creatorNovaković, Mirjana M.
dc.creatorPopović, Maja
dc.creatorZhang, Kun
dc.creatorMitrić, Miodrag
dc.creatorBibić, Nataša M.
dc.date.accessioned2018-03-01T16:20:38Z
dc.date.available2018-03-01T16:20:38Z
dc.date.issued2015
dc.identifier.issn0168-583X
dc.identifier.issn1872-9584
dc.identifier.urihttps://vinar.vin.bg.ac.rs/handle/123456789/691
dc.description.abstractReactively sputtered CrN layer, deposited on Si(100) wafer, was implanted at room temperature with 80-keV V+. ions to the fluence of 2 x 10(17) ions/cm(2). After implantation the sample was annealed in a vacuum, for 2 h at 700 degrees C. The microstructure and chemical composition of CrN films was investigated using Rutherford backscattering spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction and cross-sectional transmission electron microscopy (conventional and high-resolution), together with fast Fourier transformation analyses. It was found that vanadium atoms are distributed in the sub-surface region of CrN layer, with the maximum concentration at similar to 20 nm. After annealing the formation of VN nanoparticles was observed. The nanoparticles are spherical shaped with a size of 8-20 nm in diameter. (C) 2015 Elsevier B.V. All rights reserved.en
dc.relationinfo:eu-repo/grantAgreement/MESTD/Integrated and Interdisciplinary Research (IIR or III)/45005/RS//
dc.relationDeutsche Forschungsgemeinschaft [436 SER 113/2]
dc.rightsrestrictedAccessen
dc.sourceNuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atomsen
dc.subjectChromium-nitrideen
dc.subjectVanadium ion implantationen
dc.subjectNanoparticlesen
dc.subjectTEMen
dc.subjectXPSen
dc.titleIrradiation induced formation of VN in CrN thin filmsen
dc.typearticleen
dc.rights.licenseARR
dcterms.abstractНоваковић Мирјана; Поповић Маја; Митрић Миодраг; Зханг, К.; Бибиц, Н.;
dc.citation.volume358
dc.citation.spage206
dc.citation.epage209
dc.identifier.wos000359170800033
dc.identifier.doi10.1016/j.nimb.2015.06.036
dc.citation.rankM22
dc.type.versionpublishedVersion
dc.identifier.scopus2-s2.0-84936753616


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