Irradiation induced formation of VN in CrN thin films
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Reactively sputtered CrN layer, deposited on Si(100) wafer, was implanted at room temperature with 80-keV V+. ions to the fluence of 2 x 10(17) ions/cm(2). After implantation the sample was annealed in a vacuum, for 2 h at 700 degrees C. The microstructure and chemical composition of CrN films was investigated using Rutherford backscattering spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction and cross-sectional transmission electron microscopy (conventional and high-resolution), together with fast Fourier transformation analyses. It was found that vanadium atoms are distributed in the sub-surface region of CrN layer, with the maximum concentration at similar to 20 nm. After annealing the formation of VN nanoparticles was observed. The nanoparticles are spherical shaped with a size of 8-20 nm in diameter. (C) 2015 Elsevier B.V. All rights reserved.
Кључне речи:Chromium-nitride / Vanadium ion implantation / Nanoparticles / TEM / XPS
Извор:Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2015, 358, 206-209
- Функционални, функционализовани и усавршени нано материјали (RS-45005)
- Deutsche Forschungsgemeinschaft [436 SER 113/2]