Ion-beam irradiation effects on reactively sputtered CrN thin films
Апстракт
The present study deals with CrN/Si bilayers irradiated at room temperature (RI) with 120 keV Ar ions. The CrN layers were deposited by d.c. reactive sputtering on Si(1 0 0) wafers, at different nitrogen partial pressures (2 x 10(-4), 3.5 x 10(-4) and 5 x 10(-4) mbar), to a total thickness of 240-280 nm. The substrates were held at room temperature (RI) or 150 degrees C during deposition. After deposition the CrN/Si bilayers were irradiated up to fluences of 1 x 10(15) and 1 x 10(16) ions/cm(2). Structural characterization was performed with Rutherford backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (XTEM) and grazing angle X-ray diffraction (XRD). For the highest nitrogen pressure (5 x 10(-4) mbar) a pure stoichiometric CrN phase was achieved. The results showed that Ar ion irradiation resulted in the variation of the lattice constants, micro-strain and mean grain size of the CrN layers. The observed microstructural changes are due to the formation ...of the high density damage region in the CrN thin film structure. (C) 2010 Elsevier B.V. All rights reserved.
Кључне речи:
CrN hard coatings / Ion irradiation / TEM / RBS / XRDИзвор:
Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2010, 268, 19, 2883-2887Финансирање / пројекти:
Напомена:
- 15th International Conference of the Radiation Effects in Insulators, Aug 30-Sep 04, 2009, Italy
DOI: 10.1016/j.nimb.2010.03.027
ISSN: 0168-583X
WoS: 000282301100008
Scopus: 2-s2.0-77956174165
Колекције
Институција/група
VinčaTY - JOUR AU - Novaković, Mirjana M. AU - Popović, Maja AU - Bibić, Nataša M. PY - 2010 UR - https://vinar.vin.bg.ac.rs/handle/123456789/6886 AB - The present study deals with CrN/Si bilayers irradiated at room temperature (RI) with 120 keV Ar ions. The CrN layers were deposited by d.c. reactive sputtering on Si(1 0 0) wafers, at different nitrogen partial pressures (2 x 10(-4), 3.5 x 10(-4) and 5 x 10(-4) mbar), to a total thickness of 240-280 nm. The substrates were held at room temperature (RI) or 150 degrees C during deposition. After deposition the CrN/Si bilayers were irradiated up to fluences of 1 x 10(15) and 1 x 10(16) ions/cm(2). Structural characterization was performed with Rutherford backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (XTEM) and grazing angle X-ray diffraction (XRD). For the highest nitrogen pressure (5 x 10(-4) mbar) a pure stoichiometric CrN phase was achieved. The results showed that Ar ion irradiation resulted in the variation of the lattice constants, micro-strain and mean grain size of the CrN layers. The observed microstructural changes are due to the formation of the high density damage region in the CrN thin film structure. (C) 2010 Elsevier B.V. All rights reserved. T2 - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms T1 - Ion-beam irradiation effects on reactively sputtered CrN thin films VL - 268 IS - 19 SP - 2883 EP - 2887 DO - 10.1016/j.nimb.2010.03.027 ER -
@article{ author = "Novaković, Mirjana M. and Popović, Maja and Bibić, Nataša M.", year = "2010", abstract = "The present study deals with CrN/Si bilayers irradiated at room temperature (RI) with 120 keV Ar ions. The CrN layers were deposited by d.c. reactive sputtering on Si(1 0 0) wafers, at different nitrogen partial pressures (2 x 10(-4), 3.5 x 10(-4) and 5 x 10(-4) mbar), to a total thickness of 240-280 nm. The substrates were held at room temperature (RI) or 150 degrees C during deposition. After deposition the CrN/Si bilayers were irradiated up to fluences of 1 x 10(15) and 1 x 10(16) ions/cm(2). Structural characterization was performed with Rutherford backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (XTEM) and grazing angle X-ray diffraction (XRD). For the highest nitrogen pressure (5 x 10(-4) mbar) a pure stoichiometric CrN phase was achieved. The results showed that Ar ion irradiation resulted in the variation of the lattice constants, micro-strain and mean grain size of the CrN layers. The observed microstructural changes are due to the formation of the high density damage region in the CrN thin film structure. (C) 2010 Elsevier B.V. All rights reserved.", journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms", title = "Ion-beam irradiation effects on reactively sputtered CrN thin films", volume = "268", number = "19", pages = "2883-2887", doi = "10.1016/j.nimb.2010.03.027" }
Novaković, M. M., Popović, M.,& Bibić, N. M.. (2010). Ion-beam irradiation effects on reactively sputtered CrN thin films. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 268(19), 2883-2887. https://doi.org/10.1016/j.nimb.2010.03.027
Novaković MM, Popović M, Bibić NM. Ion-beam irradiation effects on reactively sputtered CrN thin films. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2010;268(19):2883-2887. doi:10.1016/j.nimb.2010.03.027 .
Novaković, Mirjana M., Popović, Maja, Bibić, Nataša M., "Ion-beam irradiation effects on reactively sputtered CrN thin films" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 268, no. 19 (2010):2883-2887, https://doi.org/10.1016/j.nimb.2010.03.027 . .