Computer simulation of gamma irradiation energy deposition in MOSFET dosimeters
Нема приказа
Аутори
Stanković, SrboljubIlić, Radovan D.
Osmokrović, Predrag V.
Lončar, Boris B.
Vasić, Aleksandra
Чланак у часопису
Метаподаци
Приказ свих података о документуАпстракт
The application of MOSFETs as detectors or device components in pulse power technique requires an investigation of their characteristics in radiation fields. Computing possibilities of the renowned programs FOTELP and PENELOPE for determining the energy deposited in MOISFET structure and dose distribution within microscopic dimensions of the dosimeter sensitive volume were presented in this paper. Based on the obtained results, qualitative conclusions were drawn about the values of energy deposited in different material zones having various dimensions. The difference between the two codes used for calculations in materials physics and semiconductor technics, basically originates from the different physical models for numerical simulation of photon, positron, and electron transport through various materials.
Кључне речи:
FOTELP / gamma radiation / Monte Carlo method / MOSFET / PENELOPEИзвор:
IEEE Transactions on Plasma Science, 2006, 34, 5, 1715-1718Напомена:
- 15th IEEE International Pulsed Power Conference, 2005, Monterey, CA
DOI: 10.1109/TPS.2006.883327
ISSN: 0093-3813
WoS: 000241439700016
Scopus: 2-s2.0-33750395610
Колекције
Институција/група
VinčaTY - JOUR AU - Stanković, Srboljub AU - Ilić, Radovan D. AU - Osmokrović, Predrag V. AU - Lončar, Boris B. AU - Vasić, Aleksandra PY - 2006 UR - https://vinar.vin.bg.ac.rs/handle/123456789/6626 AB - The application of MOSFETs as detectors or device components in pulse power technique requires an investigation of their characteristics in radiation fields. Computing possibilities of the renowned programs FOTELP and PENELOPE for determining the energy deposited in MOISFET structure and dose distribution within microscopic dimensions of the dosimeter sensitive volume were presented in this paper. Based on the obtained results, qualitative conclusions were drawn about the values of energy deposited in different material zones having various dimensions. The difference between the two codes used for calculations in materials physics and semiconductor technics, basically originates from the different physical models for numerical simulation of photon, positron, and electron transport through various materials. T2 - IEEE Transactions on Plasma Science T1 - Computer simulation of gamma irradiation energy deposition in MOSFET dosimeters VL - 34 IS - 5 SP - 1715 EP - 1718 DO - 10.1109/TPS.2006.883327 ER -
@article{ author = "Stanković, Srboljub and Ilić, Radovan D. and Osmokrović, Predrag V. and Lončar, Boris B. and Vasić, Aleksandra", year = "2006", abstract = "The application of MOSFETs as detectors or device components in pulse power technique requires an investigation of their characteristics in radiation fields. Computing possibilities of the renowned programs FOTELP and PENELOPE for determining the energy deposited in MOISFET structure and dose distribution within microscopic dimensions of the dosimeter sensitive volume were presented in this paper. Based on the obtained results, qualitative conclusions were drawn about the values of energy deposited in different material zones having various dimensions. The difference between the two codes used for calculations in materials physics and semiconductor technics, basically originates from the different physical models for numerical simulation of photon, positron, and electron transport through various materials.", journal = "IEEE Transactions on Plasma Science", title = "Computer simulation of gamma irradiation energy deposition in MOSFET dosimeters", volume = "34", number = "5", pages = "1715-1718", doi = "10.1109/TPS.2006.883327" }
Stanković, S., Ilić, R. D., Osmokrović, P. V., Lončar, B. B.,& Vasić, A.. (2006). Computer simulation of gamma irradiation energy deposition in MOSFET dosimeters. in IEEE Transactions on Plasma Science, 34(5), 1715-1718. https://doi.org/10.1109/TPS.2006.883327
Stanković S, Ilić RD, Osmokrović PV, Lončar BB, Vasić A. Computer simulation of gamma irradiation energy deposition in MOSFET dosimeters. in IEEE Transactions on Plasma Science. 2006;34(5):1715-1718. doi:10.1109/TPS.2006.883327 .
Stanković, Srboljub, Ilić, Radovan D., Osmokrović, Predrag V., Lončar, Boris B., Vasić, Aleksandra, "Computer simulation of gamma irradiation energy deposition in MOSFET dosimeters" in IEEE Transactions on Plasma Science, 34, no. 5 (2006):1715-1718, https://doi.org/10.1109/TPS.2006.883327 . .