Radiological characterization of semiconductor materials in field effect transistor dosimeter by Monte Carlo method
Апстракт
The use of semiconductor materials in radiation processing, radiation therapy and diagnostics, and detection of cosmic radiation motivated development of numerical methods for its radiological characterization. This paper presents the application of the Monte Carlo method using the FOTELP-2K4 code for radiological characterization of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) dosimeter. The advantages of MOSFET dosimeters include small size, immediate readout, and ease of use for a wide photon energy range. In order to determine the dosimeter response accurately, distribution of the absorbed dose in the MOSFET structure has been investigated. Our results show that the absorbed dose distribution calculated by the presented simulation model compares well with the published data.
Кључне речи:
FOTELP / Monte Carlo method / MOSFET / radiation / semiconductor materialsИзвор:
Materials Science Forum, 2006, 518, 361-365Напомена:
- Recent Developments in Advanced Materials and Processes, 7th Conference of the Yugoslav-Materials-Research-Society (Yu-MRS), Sep 12-16, 2005, Herceg Novi, Montenegro
DOI: 10.4028/www.scientific.net/MSF.518.361
ISSN: 0255-5476
WoS: 000239351800060
Scopus: 2-s2.0-37849027770
Колекције
Институција/група
VinčaTY - JOUR AU - Stanković, Srboljub AU - Ilić, Radovan D. AU - Petrović, Milica S. AU - Lončar, Boris B. AU - Vasić, Aleksandra PY - 2006 UR - https://vinar.vin.bg.ac.rs/handle/123456789/6612 AB - The use of semiconductor materials in radiation processing, radiation therapy and diagnostics, and detection of cosmic radiation motivated development of numerical methods for its radiological characterization. This paper presents the application of the Monte Carlo method using the FOTELP-2K4 code for radiological characterization of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) dosimeter. The advantages of MOSFET dosimeters include small size, immediate readout, and ease of use for a wide photon energy range. In order to determine the dosimeter response accurately, distribution of the absorbed dose in the MOSFET structure has been investigated. Our results show that the absorbed dose distribution calculated by the presented simulation model compares well with the published data. T2 - Materials Science Forum T1 - Radiological characterization of semiconductor materials in field effect transistor dosimeter by Monte Carlo method VL - 518 SP - 361 EP - 365 DO - 10.4028/www.scientific.net/MSF.518.361 ER -
@article{ author = "Stanković, Srboljub and Ilić, Radovan D. and Petrović, Milica S. and Lončar, Boris B. and Vasić, Aleksandra", year = "2006", abstract = "The use of semiconductor materials in radiation processing, radiation therapy and diagnostics, and detection of cosmic radiation motivated development of numerical methods for its radiological characterization. This paper presents the application of the Monte Carlo method using the FOTELP-2K4 code for radiological characterization of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) dosimeter. The advantages of MOSFET dosimeters include small size, immediate readout, and ease of use for a wide photon energy range. In order to determine the dosimeter response accurately, distribution of the absorbed dose in the MOSFET structure has been investigated. Our results show that the absorbed dose distribution calculated by the presented simulation model compares well with the published data.", journal = "Materials Science Forum", title = "Radiological characterization of semiconductor materials in field effect transistor dosimeter by Monte Carlo method", volume = "518", pages = "361-365", doi = "10.4028/www.scientific.net/MSF.518.361" }
Stanković, S., Ilić, R. D., Petrović, M. S., Lončar, B. B.,& Vasić, A.. (2006). Radiological characterization of semiconductor materials in field effect transistor dosimeter by Monte Carlo method. in Materials Science Forum, 518, 361-365. https://doi.org/10.4028/www.scientific.net/MSF.518.361
Stanković S, Ilić RD, Petrović MS, Lončar BB, Vasić A. Radiological characterization of semiconductor materials in field effect transistor dosimeter by Monte Carlo method. in Materials Science Forum. 2006;518:361-365. doi:10.4028/www.scientific.net/MSF.518.361 .
Stanković, Srboljub, Ilić, Radovan D., Petrović, Milica S., Lončar, Boris B., Vasić, Aleksandra, "Radiological characterization of semiconductor materials in field effect transistor dosimeter by Monte Carlo method" in Materials Science Forum, 518 (2006):361-365, https://doi.org/10.4028/www.scientific.net/MSF.518.361 . .