Analysis of SiO2 thin film deposited by reactive sputtering
Romčević, Nebojša Ž.
Bibić, Nataša M.
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SiO2 layers were deposited by reactive d.c ion sputtering (using 1 keV Ar+ ion gun) from a high purity silicon target in an oxygen ambient. The base pressure in the deposition chamber was 4.7-10(-9) mbar, and the substrate temperature was held at 550 degrees C. The argon partial pressure during ion gun operation was 1-10(-3) mbar. Structural characterization of the films was performed by Rutherford backscattering spectrometry (RBS analysis), electron microprobe analysis, X-ray diffraction (XRD analysis) and Raman spectroscopy. Reactive sputtering proved to be efficient for the deposition of silica at an oxygen partial pressure of 2-10(-4) mbar and an electrical current on the target of 5.5mA.
Кључне речи:electron microprobe analysis / Raman spectroscopy / RBS analysis / reactive sputtering / SiO2 / thin film / XRD analysis
Извор:Materials Science Forum, 2006, 518, 149-154
- Recent Developments in Advanced Materials and Processes, 7th Conference of the Yugoslav-Materials-Research-Society (Yu-MRS), Sep 12-16, 2005, Herceg Novi, Montenegro
ISSN: 0255-5476 (print)