Suppression of boron interstitial clusters in SOI using vacancy engineering
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As CMOS devices scale into the 45 nm process window, the requirements for the individual devices become even more stringent, with levels of activation well above solid solubility with minimal dopant diffusion. Boron interstitial clusters (BICs) are known to hinder the activation of typical boron implants reducing the level of activation even below solid solubility. This paper reports on an optimised vacancy engineering technique to reduce the interstitial population, which would normally occur after ion implantation. Hence, the BIC formation is suppressed creating a highly active layer, which remains active over a 700-1000 degrees C temperature window. Using this technique, it has been estimated that at 700 degrees C the level of activation may be around 5 x 10(20) cm(-3) rivaling techniques such pre-amorphisation combined with solid phase epitaxy re-growth. (c) 2005 Elsevier B.V. All rights reserved.
Кључне речи:boron interstitial cluster (BIC) / SOI / silicon
Извор:Materials Science and Engineering. B: Advanced Functional Solid-State Materials, 2005, 124, 210-214
- Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting, May 31-Jun 03, 2005, Strasbourg, France
ISSN: 0921-5107 (print)