Evaluating of MODFET gate capacitance and current gain cutoff frequency
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In this paper, new analytical expressions have been derived setting the relation among channel carrier capacitance C(2D), sheet density carriers n(s), gate bias v(G), intrinsic parameters of semiconductor layers, and devices geometry. The dependence of both, n(s) and c(2D) on inverse gate polarisation has been compared with literature values. The influence of donor doping concentration N(D) to characteristics n(s) (v(G)) and c(2D)(v(G)) has been investigated by the suggested analytical model. Also, the current-gain cutoff frequency f(t) has been calculated for a short channel MODFET. The discrepancy between the calculated f(t) and literature value has been discussed.
- International Conference on Microelectronics-MIEL, 24th International Conference on Microelectronics (MIEL 2004), May 16-19, 2004, Nis, Serbia
ISSN: 2159-1660 (print)