Study of the increased temperature influence on the degradation of photodetectors through ideality factor
Апстракт
Degradation of electrical and optical characteristics of photodetectors in increased temperature conditions is one of the most important limitation factors for their application. Since most of the electrical processes in semiconductor devices depend, to some extent, on temperature, investigations carried out at temperatures higher than room temperature may reveal possible changes in the output characteristics of a device. Temperature dependence of the current-voltage characteristics could suggest a dominant current flow mechanism, and the values of the ideality factor (n) and n(T) dependence could also indicate the presence, location and type of impurities and defects. This is especially important when impurities, localized near dislocations in the material, have energy levels deep in the energy gap. Such localized energy states could act as traps or recombination centers for charge carriers, modulating output current and inducing current noise in photodetector devices. So-called exten...t current (fluctuations in the output current), indicates the presence of both generation-recombination and burst noise. Magnitudes of these fluctuations are directly connected to the ideality factor and temperature, so monitoring of the n(T) dependence could indicate the changes (degradation) in not only electrical but also in optical properties of the photodiodes.
Кључне речи:
electrical and optical characteristics / ideality factor / photodetectors / temperatureИзвор:
Materials Science Forum, 2004, 453-454, 37-41Напомена:
- Progress in Advanced Materials and Processes, 5th Conference of the Yugoslav-Materials-Research-Society (Yu-MRS 2003), Sep 15-19, 2003, Herceg Novi, Yugoslavia
DOI: 10.4028/www.scientific.net/MSF.453-454.37
ISSN: 0255-5476
WoS: 000221535700007
Scopus: 2-s2.0-3142697837
Колекције
Институција/група
VinčaTY - JOUR AU - Vasić, Aleksandra AU - Osmokrović, Predrag V. AU - Stanković, Srboljub AU - Lončar, Boris B. PY - 2004 UR - https://vinar.vin.bg.ac.rs/handle/123456789/6417 AB - Degradation of electrical and optical characteristics of photodetectors in increased temperature conditions is one of the most important limitation factors for their application. Since most of the electrical processes in semiconductor devices depend, to some extent, on temperature, investigations carried out at temperatures higher than room temperature may reveal possible changes in the output characteristics of a device. Temperature dependence of the current-voltage characteristics could suggest a dominant current flow mechanism, and the values of the ideality factor (n) and n(T) dependence could also indicate the presence, location and type of impurities and defects. This is especially important when impurities, localized near dislocations in the material, have energy levels deep in the energy gap. Such localized energy states could act as traps or recombination centers for charge carriers, modulating output current and inducing current noise in photodetector devices. So-called extent current (fluctuations in the output current), indicates the presence of both generation-recombination and burst noise. Magnitudes of these fluctuations are directly connected to the ideality factor and temperature, so monitoring of the n(T) dependence could indicate the changes (degradation) in not only electrical but also in optical properties of the photodiodes. T2 - Materials Science Forum T1 - Study of the increased temperature influence on the degradation of photodetectors through ideality factor VL - 453-454 SP - 37 EP - 41 DO - 10.4028/www.scientific.net/MSF.453-454.37 ER -
@article{ author = "Vasić, Aleksandra and Osmokrović, Predrag V. and Stanković, Srboljub and Lončar, Boris B.", year = "2004", abstract = "Degradation of electrical and optical characteristics of photodetectors in increased temperature conditions is one of the most important limitation factors for their application. Since most of the electrical processes in semiconductor devices depend, to some extent, on temperature, investigations carried out at temperatures higher than room temperature may reveal possible changes in the output characteristics of a device. Temperature dependence of the current-voltage characteristics could suggest a dominant current flow mechanism, and the values of the ideality factor (n) and n(T) dependence could also indicate the presence, location and type of impurities and defects. This is especially important when impurities, localized near dislocations in the material, have energy levels deep in the energy gap. Such localized energy states could act as traps or recombination centers for charge carriers, modulating output current and inducing current noise in photodetector devices. So-called extent current (fluctuations in the output current), indicates the presence of both generation-recombination and burst noise. Magnitudes of these fluctuations are directly connected to the ideality factor and temperature, so monitoring of the n(T) dependence could indicate the changes (degradation) in not only electrical but also in optical properties of the photodiodes.", journal = "Materials Science Forum", title = "Study of the increased temperature influence on the degradation of photodetectors through ideality factor", volume = "453-454", pages = "37-41", doi = "10.4028/www.scientific.net/MSF.453-454.37" }
Vasić, A., Osmokrović, P. V., Stanković, S.,& Lončar, B. B.. (2004). Study of the increased temperature influence on the degradation of photodetectors through ideality factor. in Materials Science Forum, 453-454, 37-41. https://doi.org/10.4028/www.scientific.net/MSF.453-454.37
Vasić A, Osmokrović PV, Stanković S, Lončar BB. Study of the increased temperature influence on the degradation of photodetectors through ideality factor. in Materials Science Forum. 2004;453-454:37-41. doi:10.4028/www.scientific.net/MSF.453-454.37 .
Vasić, Aleksandra, Osmokrović, Predrag V., Stanković, Srboljub, Lončar, Boris B., "Study of the increased temperature influence on the degradation of photodetectors through ideality factor" in Materials Science Forum, 453-454 (2004):37-41, https://doi.org/10.4028/www.scientific.net/MSF.453-454.37 . .