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Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM
dc.creator | Paneta, Valentina | |
dc.creator | Erich, Marko | |
dc.creator | Fazinić, Stjepko | |
dc.creator | Kokkoris, Michael | |
dc.creator | Kopsalis, Ioannis | |
dc.creator | Petrović, Srđan M. | |
dc.creator | Tadić, Tonči | |
dc.date.accessioned | 2018-03-01T23:59:13Z | |
dc.date.available | 2018-03-01T23:59:13Z | |
dc.date.issued | 2014 | |
dc.identifier.issn | 0168-583X | |
dc.identifier.issn | 1872-9584 | |
dc.identifier.uri | https://vinar.vin.bg.ac.rs/handle/123456789/5885 | |
dc.description.abstract | Ion implantation is one of the most important techniques used in the silicon-based semiconductor industry. Using the ion axial channeling effect, which occurs when an ion beam is oriented along a crystallographic axis, it is theoretically possible to implant ions deeper in the crystal, in comparison with the random ion beam-solid orientation, while - at the same time - minimizing the induced crystal lattice damage. In the present work, 4 MeV C-12(2+) and 5 MeV O-16(2+) ions were implanted in high-purity [1 1 0] Si crystal wafers at fluences of the order of similar to 10(17) particles/cm(2), in both the channeling and random orientations. The resulting profiles were measured using d-NRA, i.e. implementing the C-12(d,p(0)) and O-16(d,p(0),alpha(0)) reactions respectively, at E-d,E-lab = 1.2-1.4 MeV. The results were validated using SEM (Scanning Electron Microscopy), while the extent of crystalline damage was monitored during the implantation via RBS/C (Rutherford Backscattering Spectrometry/Channeling) spectra. The resulting profiles seem to be in good agreement with those obtained in the past for fluorine and nitrogen ions implanted in silicon, and clearly demonstrate the capabilities of high-energy channeling implantations, as well as, the accuracy of d-NRA (Nuclear Reaction Analysis) profiling measurements. | en |
dc.relation | info:eu-repo/grantAgreement/MESTD/Integrated and Interdisciplinary Research (IIR or III)/45006/RS// | |
dc.relation | info:eu-repo/grantAgreement/EC/FP7/227012/EU// | |
dc.relation | Support of Public and Industrial Research Using Ion Beam Technology (SPIRIT) as an Integrated Infrastructure Initiative project | |
dc.rights | restrictedAccess | en |
dc.source | Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms | en |
dc.subject | d-NRA | en |
dc.subject | Channeling implantation | en |
dc.subject | SEM | en |
dc.title | Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM | en |
dc.type | article | en |
dc.rights.license | ARR | |
dcterms.abstract | Панета, В.; Фазиниц, С.; Коккорис, М.; Ерицх Марко; Петровић Срђан М.; Копсалис, И.; Тадиц, Т.; | |
dc.citation.volume | 320 | |
dc.citation.spage | 6 | |
dc.citation.epage | 11 | |
dc.identifier.wos | 000331428000002 | |
dc.identifier.doi | 10.1016/j.nimb.2013.11.020 | |
dc.citation.rank | M22 | |
dc.type.version | publishedVersion | |
dc.identifier.scopus | 2-s2.0-84890946280 |
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