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dc.creatorLei, Hechang
dc.creatorRyu, Hyejin
dc.creatorIvanovski, Valentin N.
dc.creatorWarren, J. B.
dc.creatorFrenkel, A. I.
dc.creatorCekić, Božidar Đ.
dc.creatorYin, Wei-Guo
dc.creatorPetrovic, C.
dc.date.accessioned2018-03-01T22:57:58Z
dc.date.available2018-03-01T22:57:58Z
dc.date.issued2012
dc.identifier.issn1098-0121 (print)
dc.identifier.urihttp://vinar.vin.bg.ac.rs/123456789/5176
dc.description.abstractWe have successfully synthesized a layered iron oxychalcogenide BaFe2Se2O single crystal. This compound is built up of Ba and Fe-Se(O) layers alternatively stacked along the c axis. The Fe-Se(O) layers contain double chains of edge-shared Fe-Se(O) tetrahedra that propagate along the b axis and are bridged by oxygen along the a axis. Physical property measurements indicate that BaFe2Se2O is a semiconductor without the Curie-Weiss behavior up to 350 K. There is a possible long-range antiferromagnetic transition at 240 K, corresponding to the peak in specific-heat measurement, and two transitions at 115 K and 43 K where magnetic susceptibility drops abruptly. The magnetic entropy up to 300 K is much smaller than the expected value for Fe2+ in tetrahedral crystal fields and the Mossbauer spectrum indicates that long-range magnetic order is unlikely at 294 K. Our results suggest that BaFe2Se2O is a magnetic insulator at the borderline between a long-range antiferromagnetic spin ordering and possible spin dimerization.en
dc.relationinfo:eu-repo/grantAgreement/MESTD/Basic Research (BR or ON)/171001/RS//
dc.relationUS DOE [DE-AC02-98CH10886], US Department of Energy [DE-FG02-03ER15476, DE-FG02-05ER15688]
dc.rightsclosedAccessen
dc.sourcePhysical Review B: Condensed Matter and Materials Physicsen
dc.titleStructure and physical properties of the layered iron oxychalcogenide BaFe2Se2Oen
dc.typearticleen
dcterms.abstractПетровиц, Ц.; Wаррен, Ј. Б.; Френкел, A. И.; Ивановски Валентин; Yин, Wеи-Гуо; Цекиц, Б.; Леи, Хецханг; Рyу, Хyејин;
dc.citation.volume86
dc.citation.issue19
dc.identifier.wos000311544500001
dc.identifier.doi10.1103/PhysRevB.86.195133
dc.citation.otherArticle Number: 195133
dc.citation.rankM21
dc.identifier.scopus2-s2.0-84870422009


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