Possibility of Composite Silicon Nitride Plus Silicon Carbide (Si3n4-Sic) Powder Production in Thermal Plasma
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The results of equilibrium composition computation and total (including heat of formation) enthalpy calculation, in the temperature range of 1000 to 6000 and at pressure of 1 bar, for the Si-C-H-N system are presented in the paper. These data enable the determination and optimization of mass, temperature and energy parameters of the powder production process of composite silicone nitride + silicone carbide (Si3N4-SiC) by silicon powder evaporation in nitrogen plasma, followed by reactive quenching with cold methane. The way of using the system enthalpy, temperature interdependence for the prediction of temperature mass and energy parameters of the process, has been illustrated on the presented example.
Кључне речи:silicon nitride / silicon carbide / composite powders / plasma synthesis
Извор:High Temperature Material Processes, 2011, 15, 4, 321-328
ISSN: 1093-3611 (print)