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Cubic GaN/AlGaN based quantum wells optimized for applications to tunable mid-infrared photodetectors
dc.creator | Radosavljević, Ana | |
dc.creator | Radovanović, Jelena V. | |
dc.creator | Milanović, Vitomir B. | |
dc.creator | Indjin, Dragan | |
dc.date.accessioned | 2018-03-01T16:01:24Z | |
dc.date.available | 2018-03-01T16:01:24Z | |
dc.date.issued | 2015 | |
dc.identifier.issn | 0306-8919 | |
dc.identifier.issn | 1572-817X | |
dc.identifier.uri | https://vinar.vin.bg.ac.rs/handle/123456789/470 | |
dc.description.abstract | We propose a method which delivers optimal cubic GaN/AlGaN quantum well profiles such that both the Stark effect and peak intersubband absorption from the ground to the first excited electronic state, in a prescribed range of bias electric fields, are maximized. Our method relies on the Genetic Algorithm which finds globally optimal structures with a predefined number of embedded layers. We investigate simple rectangular quantum wells with embedded step layers for applications in tunable mid-infrared photodetectors. The effects of band nonparabolicity are taken into account to refine our model. | en |
dc.relation | info:eu-repo/grantAgreement/MESTD/Integrated and Interdisciplinary Research (IIR or III)/45010/RS// | |
dc.relation | MPNS COST ACTION [MP1204 - TERA-MIR], BMBS COST Action - European Network for Skin Cancer Detection using Laser Imaging [BM1205] | |
dc.rights | restrictedAccess | en |
dc.source | Optical and Quantum Electronics | en |
dc.subject | Quantum well | en |
dc.subject | Stark effect | en |
dc.subject | Intersubband absorption | en |
dc.subject | Tunable photodetectors | en |
dc.subject | Genetic algorithm | en |
dc.title | Cubic GaN/AlGaN based quantum wells optimized for applications to tunable mid-infrared photodetectors | en |
dc.type | article | en |
dcterms.abstract | Радосављевић Aна; Индјин, Д.; Радовановиц, Ј.; Милановиц, В.; | |
dc.citation.volume | 47 | |
dc.citation.issue | 4 | |
dc.citation.spage | 865 | |
dc.citation.epage | 872 | |
dc.identifier.wos | 000351692800007 | |
dc.identifier.doi | 10.1007/s11082-014-0016-y | |
dc.citation.other | Special Issue: SI | |
dc.citation.rank | M23 | |
dc.type.version | publishedVersion | |
dc.identifier.scopus | 2-s2.0-84925859729 |