Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation
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2011
Authors
Milosavljević, MomirMilinović, Velimir
Peruško, Davor
Grce, Ana
Stojanović, Mirjana
Pjević, Dejan J.
Mitrić, Miodrag
Kovač, Janez
Homewood, Kevin P.
Article (Published version)
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The effects of argon ion irradiation on structural changes in Ta/Ti multilayers deposited on Si wafers were investigated. The starting structures consisted of sputter deposited 10 alternate Ta (similar to 23 nm) and Ti (similar to 17 nm) layers of a total thickness similar to 200 nm. They were irradiated at room temperature with 200 key Ar(+), to the fluences from 5 x 10(15) to 2 x 10(16) ions/cm(2). The projected ion range was around mid-depth of the multilayered structure, and maximum displacements per atom similar to 130. It was found that, despite of the relatively heavy ion irradiation, individual nanocrystalline Ta and Ti layers remain unmixed, keeping the same level of interface planarity. The changes observed in the mostly affected region are increase in lateral dimensions of crystal grains in individual layers, and incorporation of bubbles and defects that cause some stretching of the crystal lattice. Absence of interlayer mixing is assigned to Ta-Ti immiscibility (reaction en...thalpy Delta H(f) = +2 kJ/mol). It is estimated that up to similar to 5 at.% interface mixing induced directly by collision cascades could be compensated by dynamic demixing due to chemical driving forces in the temperature relaxation regime. The results can be interesting towards developing radiation tolerant materials based on multilayered structures. (C) 2011 Elsevier B.V. All rights reserved.
Keywords:
Ta/Ti multilayers / Nanocrystalline structure / Ion implantation / Radiation toleranceSource:
Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2011, 269, 19, 2090-2097Funding / projects:
- SPIRIT - Support of Public and Industrial Research using Ion Beam Technology (EU-FP7-227012)
- Physical processes in the synthesis of advanced nanostructured materials (RS-MESTD-Basic Research (BR or ON)-171023)
- SILAMPS - Silicon integrated lasers and optical amplifiers (EU-FP7-226470)
- Slovenian Research Agency [P2-0082]
DOI: 10.1016/j.nimb.2011.06.017
ISSN: 0168-583X
WoS: 000294936400009
Scopus: 2-s2.0-84860388998
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VinčaTY - JOUR AU - Milosavljević, Momir AU - Milinović, Velimir AU - Peruško, Davor AU - Grce, Ana AU - Stojanović, Mirjana AU - Pjević, Dejan J. AU - Mitrić, Miodrag AU - Kovač, Janez AU - Homewood, Kevin P. PY - 2011 UR - https://vinar.vin.bg.ac.rs/handle/123456789/4487 AB - The effects of argon ion irradiation on structural changes in Ta/Ti multilayers deposited on Si wafers were investigated. The starting structures consisted of sputter deposited 10 alternate Ta (similar to 23 nm) and Ti (similar to 17 nm) layers of a total thickness similar to 200 nm. They were irradiated at room temperature with 200 key Ar(+), to the fluences from 5 x 10(15) to 2 x 10(16) ions/cm(2). The projected ion range was around mid-depth of the multilayered structure, and maximum displacements per atom similar to 130. It was found that, despite of the relatively heavy ion irradiation, individual nanocrystalline Ta and Ti layers remain unmixed, keeping the same level of interface planarity. The changes observed in the mostly affected region are increase in lateral dimensions of crystal grains in individual layers, and incorporation of bubbles and defects that cause some stretching of the crystal lattice. Absence of interlayer mixing is assigned to Ta-Ti immiscibility (reaction enthalpy Delta H(f) = +2 kJ/mol). It is estimated that up to similar to 5 at.% interface mixing induced directly by collision cascades could be compensated by dynamic demixing due to chemical driving forces in the temperature relaxation regime. The results can be interesting towards developing radiation tolerant materials based on multilayered structures. (C) 2011 Elsevier B.V. All rights reserved. T2 - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms T1 - Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation VL - 269 IS - 19 SP - 2090 EP - 2097 DO - 10.1016/j.nimb.2011.06.017 ER -
@article{ author = "Milosavljević, Momir and Milinović, Velimir and Peruško, Davor and Grce, Ana and Stojanović, Mirjana and Pjević, Dejan J. and Mitrić, Miodrag and Kovač, Janez and Homewood, Kevin P.", year = "2011", abstract = "The effects of argon ion irradiation on structural changes in Ta/Ti multilayers deposited on Si wafers were investigated. The starting structures consisted of sputter deposited 10 alternate Ta (similar to 23 nm) and Ti (similar to 17 nm) layers of a total thickness similar to 200 nm. They were irradiated at room temperature with 200 key Ar(+), to the fluences from 5 x 10(15) to 2 x 10(16) ions/cm(2). The projected ion range was around mid-depth of the multilayered structure, and maximum displacements per atom similar to 130. It was found that, despite of the relatively heavy ion irradiation, individual nanocrystalline Ta and Ti layers remain unmixed, keeping the same level of interface planarity. The changes observed in the mostly affected region are increase in lateral dimensions of crystal grains in individual layers, and incorporation of bubbles and defects that cause some stretching of the crystal lattice. Absence of interlayer mixing is assigned to Ta-Ti immiscibility (reaction enthalpy Delta H(f) = +2 kJ/mol). It is estimated that up to similar to 5 at.% interface mixing induced directly by collision cascades could be compensated by dynamic demixing due to chemical driving forces in the temperature relaxation regime. The results can be interesting towards developing radiation tolerant materials based on multilayered structures. (C) 2011 Elsevier B.V. All rights reserved.", journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms", title = "Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation", volume = "269", number = "19", pages = "2090-2097", doi = "10.1016/j.nimb.2011.06.017" }
Milosavljević, M., Milinović, V., Peruško, D., Grce, A., Stojanović, M., Pjević, D. J., Mitrić, M., Kovač, J.,& Homewood, K. P.. (2011). Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 269(19), 2090-2097. https://doi.org/10.1016/j.nimb.2011.06.017
Milosavljević M, Milinović V, Peruško D, Grce A, Stojanović M, Pjević DJ, Mitrić M, Kovač J, Homewood KP. Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2011;269(19):2090-2097. doi:10.1016/j.nimb.2011.06.017 .
Milosavljević, Momir, Milinović, Velimir, Peruško, Davor, Grce, Ana, Stojanović, Mirjana, Pjević, Dejan J., Mitrić, Miodrag, Kovač, Janez, Homewood, Kevin P., "Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 269, no. 19 (2011):2090-2097, https://doi.org/10.1016/j.nimb.2011.06.017 . .