Structural characterization of TiN coatings on Si substrates irradiated with Ar ions
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The present study deals with TiN/Si bilayers irradiated at room temperature (RT) with 120 keV Ar ions. The TiN layers were deposited by d.c. reactive sputtering on Si(100) wafers to a thickness of similar to 240 nm. After deposition the TiN/Si bilayers were irradiated to the fluences of 1 X 10(15) ions/cm(2) and 1 x 10(16) ions/cm(2). Structural characterization was performed with Rutherford backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (XTEM), grazing angle X-ray diffraction (XRD) and atomic force microscopy (AFM). The results showed that the variation of the lattice constants, mean grain size and micro-strain can be attributed to the formation of the high density damage region in the TiN film structure. It has been found that this damage region is mainly distributed within similar to 100 nm at surface of the TiN layers. (C) 2009 Elsevier Inc. All rights reserved.
Кључне речи:Titanium nitride / Ion irradiation / TEM / RBS / XRD
Извор:Materials Characterization, 2009, 60, 12, 1463-1470
- Ministry of Sciences and Environmental Protection of the Republic of Serbia [OI141013]