Spin-dependent dwell times of electron tunneling through double- and triple-barrier structures
Апстракт
We have analyzed the influence of Dresselhaus and Rashba spin-orbit couplings (caused by the bulk inversion asymmetry and the structural asymmetry, respectively) on electron tunneling through a double- and triple-barrier structures, with and without an externally applied electric field. The results indicate that the degree of structural asymmetry and external electric field can greatly affect the dwell times of electrons with opposite spin orientation. This opens up the possibilities of obtaining efficient spin separation in the time domain. The material system of choice is AlxGa1-xSb, and the presented model takes into account the position dependence of material parameters, as well as the effects of band nonparabolicity. (C) 2008 American Institute of Physics.
Извор:
Journal of Applied Physics, 2008, 103, 8
DOI: 10.1063/1.2904869
ISSN: 0021-8979; 1089-7550
WoS: 000255456200086
Scopus: 2-s2.0-43049114585
Колекције
Институција/група
VinčaTY - JOUR AU - Erich, Marko AU - Radovanović, Jelena V. AU - Milanović, Vitomir B. AU - Ikonić, Zoran AU - Indjin, Dragan PY - 2008 UR - https://vinar.vin.bg.ac.rs/handle/123456789/3437 AB - We have analyzed the influence of Dresselhaus and Rashba spin-orbit couplings (caused by the bulk inversion asymmetry and the structural asymmetry, respectively) on electron tunneling through a double- and triple-barrier structures, with and without an externally applied electric field. The results indicate that the degree of structural asymmetry and external electric field can greatly affect the dwell times of electrons with opposite spin orientation. This opens up the possibilities of obtaining efficient spin separation in the time domain. The material system of choice is AlxGa1-xSb, and the presented model takes into account the position dependence of material parameters, as well as the effects of band nonparabolicity. (C) 2008 American Institute of Physics. T2 - Journal of Applied Physics T1 - Spin-dependent dwell times of electron tunneling through double- and triple-barrier structures VL - 103 IS - 8 DO - 10.1063/1.2904869 ER -
@article{ author = "Erich, Marko and Radovanović, Jelena V. and Milanović, Vitomir B. and Ikonić, Zoran and Indjin, Dragan", year = "2008", abstract = "We have analyzed the influence of Dresselhaus and Rashba spin-orbit couplings (caused by the bulk inversion asymmetry and the structural asymmetry, respectively) on electron tunneling through a double- and triple-barrier structures, with and without an externally applied electric field. The results indicate that the degree of structural asymmetry and external electric field can greatly affect the dwell times of electrons with opposite spin orientation. This opens up the possibilities of obtaining efficient spin separation in the time domain. The material system of choice is AlxGa1-xSb, and the presented model takes into account the position dependence of material parameters, as well as the effects of band nonparabolicity. (C) 2008 American Institute of Physics.", journal = "Journal of Applied Physics", title = "Spin-dependent dwell times of electron tunneling through double- and triple-barrier structures", volume = "103", number = "8", doi = "10.1063/1.2904869" }
Erich, M., Radovanović, J. V., Milanović, V. B., Ikonić, Z.,& Indjin, D.. (2008). Spin-dependent dwell times of electron tunneling through double- and triple-barrier structures. in Journal of Applied Physics, 103(8). https://doi.org/10.1063/1.2904869
Erich M, Radovanović JV, Milanović VB, Ikonić Z, Indjin D. Spin-dependent dwell times of electron tunneling through double- and triple-barrier structures. in Journal of Applied Physics. 2008;103(8). doi:10.1063/1.2904869 .
Erich, Marko, Radovanović, Jelena V., Milanović, Vitomir B., Ikonić, Zoran, Indjin, Dragan, "Spin-dependent dwell times of electron tunneling through double- and triple-barrier structures" in Journal of Applied Physics, 103, no. 8 (2008), https://doi.org/10.1063/1.2904869 . .