Spin-dependent dwell times of electron tunneling through double- and triple-barrier structures
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We have analyzed the influence of Dresselhaus and Rashba spin-orbit couplings (caused by the bulk inversion asymmetry and the structural asymmetry, respectively) on electron tunneling through a double- and triple-barrier structures, with and without an externally applied electric field. The results indicate that the degree of structural asymmetry and external electric field can greatly affect the dwell times of electrons with opposite spin orientation. This opens up the possibilities of obtaining efficient spin separation in the time domain. The material system of choice is AlxGa1-xSb, and the presented model takes into account the position dependence of material parameters, as well as the effects of band nonparabolicity. (C) 2008 American Institute of Physics.
Извор:Journal of Applied Physics, 2008, 103, 8
ISSN: 0021-8979 (print); 1089-7550 (electronic)