Deposition on thin SiO2 layer by reactive sputtering
Само за регистроване кориснике
2007
Аутори
Radović, IvanSerruys, Y.
Limoge, Y.
Milosavljević, Momir
Romčević, Nebojša Ž.
Bibić, Nataša M.
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
We investigate the experimental possibilities for producing high purity stoichiometric SiO2 thin films by reactive ion beam sputtering. The layers were deposited in a UHV chamber ( base pressure 4 x 10(-9) mbar) by 1 keV Ar+ ions for sputtering from a high purity silicon target, using different values of the oxygen partial pressure ( 5 x 10(-6) -1 x 10(-3) mbar) and of the ion beam current on the target (1.67 - 6.85 mA). The argon partial pressure during ion gun operation was 1 x 10(-3) mbar. The substrates were held at room temperature or at 550 degrees C, and the films were deposited to 12.5 - 150 nm, at a rate from 0.0018 - 0.035 nm/s. To perform structural characterization we used Rutherford backscattering spectrometry, electron microprobe, X-ray diffraction and Raman spectroscopy. From the results it is clear that reactive ion beam sputtering proved to be efficient for deposition of high quality silica films at 550 degrees C, oxygen partial pressure of 2 x 10(-4) mbar ( ion beam c...urrent on the target from 5 to 5.5 mA) or at a lower deposition rate, ion beam current of 1.67 mA and oxygen partial pressure of 6 x 10(-5) mbar. The aim of these investigations was also to study the consumption of oxygen from the gas cylinder. We found that it is lower for higher deposition rates.
Кључне речи:
SiO2 / thin films / reactive sputtering / RBS analysisИзвор:
Optoelectronics and Advanced Materials - Rapid Communications, 2007, 1, 5, 247-251Колекције
Институција/група
VinčaTY - JOUR AU - Radović, Ivan AU - Serruys, Y. AU - Limoge, Y. AU - Milosavljević, Momir AU - Romčević, Nebojša Ž. AU - Bibić, Nataša M. PY - 2007 UR - https://vinar.vin.bg.ac.rs/handle/123456789/3374 AB - We investigate the experimental possibilities for producing high purity stoichiometric SiO2 thin films by reactive ion beam sputtering. The layers were deposited in a UHV chamber ( base pressure 4 x 10(-9) mbar) by 1 keV Ar+ ions for sputtering from a high purity silicon target, using different values of the oxygen partial pressure ( 5 x 10(-6) -1 x 10(-3) mbar) and of the ion beam current on the target (1.67 - 6.85 mA). The argon partial pressure during ion gun operation was 1 x 10(-3) mbar. The substrates were held at room temperature or at 550 degrees C, and the films were deposited to 12.5 - 150 nm, at a rate from 0.0018 - 0.035 nm/s. To perform structural characterization we used Rutherford backscattering spectrometry, electron microprobe, X-ray diffraction and Raman spectroscopy. From the results it is clear that reactive ion beam sputtering proved to be efficient for deposition of high quality silica films at 550 degrees C, oxygen partial pressure of 2 x 10(-4) mbar ( ion beam current on the target from 5 to 5.5 mA) or at a lower deposition rate, ion beam current of 1.67 mA and oxygen partial pressure of 6 x 10(-5) mbar. The aim of these investigations was also to study the consumption of oxygen from the gas cylinder. We found that it is lower for higher deposition rates. T2 - Optoelectronics and Advanced Materials - Rapid Communications T1 - Deposition on thin SiO2 layer by reactive sputtering VL - 1 IS - 5 SP - 247 EP - 251 UR - https://hdl.handle.net/21.15107/rcub_vinar_3374 ER -
@article{ author = "Radović, Ivan and Serruys, Y. and Limoge, Y. and Milosavljević, Momir and Romčević, Nebojša Ž. and Bibić, Nataša M.", year = "2007", abstract = "We investigate the experimental possibilities for producing high purity stoichiometric SiO2 thin films by reactive ion beam sputtering. The layers were deposited in a UHV chamber ( base pressure 4 x 10(-9) mbar) by 1 keV Ar+ ions for sputtering from a high purity silicon target, using different values of the oxygen partial pressure ( 5 x 10(-6) -1 x 10(-3) mbar) and of the ion beam current on the target (1.67 - 6.85 mA). The argon partial pressure during ion gun operation was 1 x 10(-3) mbar. The substrates were held at room temperature or at 550 degrees C, and the films were deposited to 12.5 - 150 nm, at a rate from 0.0018 - 0.035 nm/s. To perform structural characterization we used Rutherford backscattering spectrometry, electron microprobe, X-ray diffraction and Raman spectroscopy. From the results it is clear that reactive ion beam sputtering proved to be efficient for deposition of high quality silica films at 550 degrees C, oxygen partial pressure of 2 x 10(-4) mbar ( ion beam current on the target from 5 to 5.5 mA) or at a lower deposition rate, ion beam current of 1.67 mA and oxygen partial pressure of 6 x 10(-5) mbar. The aim of these investigations was also to study the consumption of oxygen from the gas cylinder. We found that it is lower for higher deposition rates.", journal = "Optoelectronics and Advanced Materials - Rapid Communications", title = "Deposition on thin SiO2 layer by reactive sputtering", volume = "1", number = "5", pages = "247-251", url = "https://hdl.handle.net/21.15107/rcub_vinar_3374" }
Radović, I., Serruys, Y., Limoge, Y., Milosavljević, M., Romčević, N. Ž.,& Bibić, N. M.. (2007). Deposition on thin SiO2 layer by reactive sputtering. in Optoelectronics and Advanced Materials - Rapid Communications, 1(5), 247-251. https://hdl.handle.net/21.15107/rcub_vinar_3374
Radović I, Serruys Y, Limoge Y, Milosavljević M, Romčević NŽ, Bibić NM. Deposition on thin SiO2 layer by reactive sputtering. in Optoelectronics and Advanced Materials - Rapid Communications. 2007;1(5):247-251. https://hdl.handle.net/21.15107/rcub_vinar_3374 .
Radović, Ivan, Serruys, Y., Limoge, Y., Milosavljević, Momir, Romčević, Nebojša Ž., Bibić, Nataša M., "Deposition on thin SiO2 layer by reactive sputtering" in Optoelectronics and Advanced Materials - Rapid Communications, 1, no. 5 (2007):247-251, https://hdl.handle.net/21.15107/rcub_vinar_3374 .