Room temperature ferromagnetism in Zn-Mn-O
Babić-Stojić Branka S.
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Zn-Mn-O semiconductor crystallites with nominal manganese concentration x = 0.01, 0.04 and 0.10 were synthesized by a solid state reaction method using oxalate precursors. A sintering procedure was carried out in air at 500 and 900 degrees C. The samples were investigated by X-ray diffraction, magnetization measurements and electron paramagnetic resonance. X-ray diffraction spectra reveal that the dominant crystal phase in the Zn-Mn-O system corresponds to the wurtzite structure of ZnO. Room temperature ferromagnetism is observed in Zn-Mn-O samples with manganese concentrations x = 0.01 and 0.04 sintered at low temperature (500 degrees C). Saturation magnetization in the x = 0.01 sample is found to be 0.03 mu(B)/Mn at T = 300 K. The ferromagnetic phase seems to be developed by Zn diffusion into Mn-oxide grains. (C) 2007 Elsevier Ltd. All rights reserved.
Кључне речи:magnetic semiconductors / Zn-Mn-O / room temperature ferromagnetism
Извор:Solid State Communications, 2007, 141, 12, 641-644
ISSN: 0038-1098 (print); 1879-2766 (electronic)