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Theory of the composition dependence of the band offset and sheet carrier density in the GaN/AlxGa1-xN heterostructure
dc.creator | Satpathy, Sashi | |
dc.creator | Popović, Zoran S. | |
dc.creator | Mitchel, WC | |
dc.date.accessioned | 2018-03-01T19:27:47Z | |
dc.date.available | 2018-03-01T19:27:47Z | |
dc.date.issued | 2004 | |
dc.identifier.issn | 0021-8979 | |
dc.identifier.uri | https://vinar.vin.bg.ac.rs/handle/123456789/2767 | |
dc.description.abstract | We present a systematic study of the sheet carrier density and valence-band offset in the GaN/AlxGa1-xN(0001) heterostructure as a function of x from ab initio density-functional methods. We find that the calculated sheet carrier density increases rapidly with x for xless than or equal to0.3 in good agreement with experiments, but beyond this concentration, it quickly saturates to a value of about 2x10(13) cm(-2). The band offset shows a small asymmetry between the Ga-face and N-face interfaces and changes more or less linearly with x, although a small bowing is found. The layer-projected densities of states indicate the formation of the two-dimensional electron gas at the Ga-face interface and confirm the absence of interface states in the gap. (C) 2004 American Institute of Physics. | en |
dc.rights | openAccess | en |
dc.source | Journal of Applied Physics | en |
dc.title | Theory of the composition dependence of the band offset and sheet carrier density in the GaN/AlxGa1-xN heterostructure | en |
dc.type | article | en |
dcterms.abstract | Сатпатхy, С; Поповиц, ЗС; Митцхел, WЦ; | |
dc.citation.volume | 95 | |
dc.citation.issue | 10 | |
dc.citation.spage | 5597 | |
dc.citation.epage | 5601 | |
dc.identifier.wos | 000221269300047 | |
dc.identifier.doi | 10.1063/1.1704869 | |
dc.citation.rank | M21 | |
dc.identifier.scopus | 2-s2.0-2942612664 |
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