On the dechanneling of protons in Si [110]
Samo za registrovane korisnike
2003
Članak u časopisu (Objavljena verzija)
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
In the present work; the dechanneling of protons in Si [110] is studied combining theoretical Monte-Carlo and phenomenological simulation results in the energy range E-p = 1.8-2.4 MeV. The applicability of a Gompertz type sigmoidal dechanneling function, with two parameters, k and x(c), which represent characteristic dechanneling rate and range, respectively, is examined; yielding the successful reproduction of backscattering spectra of channeled protons along the Si [110] crystal axis. The results are compared to the ones obtained in the past for different beam - crystal orientation combinations and an attempt is made to explain the occurring similarities and discrepancies.
Izvor:
European Physical Journal B. Condensed Matter and Complex Systems, 2003, 34, 3, 257-263
DOI: 10.1140/epjb/e2003-00219-y
ISSN: 1434-6028
WoS: 000185350300001
Scopus: 2-s2.0-2442523694
Institucija/grupa
VinčaTY - JOUR AU - Kokkoris, Michael AU - Perdikakis, Georgios AU - Kossionides, S AU - Petrović, Srđan M. AU - Simoen, Eddy Roger PY - 2003 UR - https://vinar.vin.bg.ac.rs/handle/123456789/2668 AB - In the present work; the dechanneling of protons in Si [110] is studied combining theoretical Monte-Carlo and phenomenological simulation results in the energy range E-p = 1.8-2.4 MeV. The applicability of a Gompertz type sigmoidal dechanneling function, with two parameters, k and x(c), which represent characteristic dechanneling rate and range, respectively, is examined; yielding the successful reproduction of backscattering spectra of channeled protons along the Si [110] crystal axis. The results are compared to the ones obtained in the past for different beam - crystal orientation combinations and an attempt is made to explain the occurring similarities and discrepancies. T2 - European Physical Journal B. Condensed Matter and Complex Systems T1 - On the dechanneling of protons in Si [110] VL - 34 IS - 3 SP - 257 EP - 263 DO - 10.1140/epjb/e2003-00219-y ER -
@article{ author = "Kokkoris, Michael and Perdikakis, Georgios and Kossionides, S and Petrović, Srđan M. and Simoen, Eddy Roger", year = "2003", abstract = "In the present work; the dechanneling of protons in Si [110] is studied combining theoretical Monte-Carlo and phenomenological simulation results in the energy range E-p = 1.8-2.4 MeV. The applicability of a Gompertz type sigmoidal dechanneling function, with two parameters, k and x(c), which represent characteristic dechanneling rate and range, respectively, is examined; yielding the successful reproduction of backscattering spectra of channeled protons along the Si [110] crystal axis. The results are compared to the ones obtained in the past for different beam - crystal orientation combinations and an attempt is made to explain the occurring similarities and discrepancies.", journal = "European Physical Journal B. Condensed Matter and Complex Systems", title = "On the dechanneling of protons in Si [110]", volume = "34", number = "3", pages = "257-263", doi = "10.1140/epjb/e2003-00219-y" }
Kokkoris, M., Perdikakis, G., Kossionides, S., Petrović, S. M.,& Simoen, E. R.. (2003). On the dechanneling of protons in Si [110]. in European Physical Journal B. Condensed Matter and Complex Systems, 34(3), 257-263. https://doi.org/10.1140/epjb/e2003-00219-y
Kokkoris M, Perdikakis G, Kossionides S, Petrović SM, Simoen ER. On the dechanneling of protons in Si [110]. in European Physical Journal B. Condensed Matter and Complex Systems. 2003;34(3):257-263. doi:10.1140/epjb/e2003-00219-y .
Kokkoris, Michael, Perdikakis, Georgios, Kossionides, S, Petrović, Srđan M., Simoen, Eddy Roger, "On the dechanneling of protons in Si [110]" in European Physical Journal B. Condensed Matter and Complex Systems, 34, no. 3 (2003):257-263, https://doi.org/10.1140/epjb/e2003-00219-y . .