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dc.creatorTrtica, Milan
dc.creatorGaković, Biljana M.
dc.date.accessioned2018-03-01T19:13:50Z
dc.date.available2018-03-01T19:13:50Z
dc.date.issued2003
dc.identifier.issn0169-4332 (print)
dc.identifier.urihttp://vinar.vin.bg.ac.rs/handle/123456789/2604
dc.description.abstractThe interaction of a transversely excited atmospheric (TEA) CO, laser, pulse duration of about 2 mus (FWHM of initial spike = 120 ns), with p-type single crystalline silicon doped by boron, was studied. The results have shown that the silicon was surface modified by the laser beam of 12.0 J cm(-2) energy density. The energy absorbed from the CO, laser beam is converted partially into thermal energy, which generates a series of effects such as melting, vaporisation of molten material, shock waves, etc. Morphological manifestations on the silicon surface are: nonuniform modifications (central zone of interaction); wave-like periodical microstructure (inner periphery zone); hydrodynamical structure-like droplets (outer periphery zone). Wave-like microstructure consists of periodic parallel fringes with a period of about 0.8 mum. Formation of these wave-like microstructures is very complex. Explanation includes a consideration of the laser-induced periodic surface structure (LIPSS) effect. The process of the CO2 laser interaction with silicon was not initially accompanied by plasma. Plasma, in the form of a spark, typically appeared after about 100 cumulated laser pulses. (C) 2002 Elsevier Science B.V. All rights reserved.en
dc.rightsrestrictedAccessen
dc.sourceApplied Surface Scienceen
dc.subjectlaser surface modificationen
dc.subjectsiliconen
dc.subjectlaser-induced periodic microstructureen
dc.subjectpulsed TEA carbon dioxide laseren
dc.titlePulsed TEA CO2 laser surface modifications of siliconen
dc.typearticleen
dcterms.abstractТртица Милан; Гаковић Биљана М;
dc.citation.volume205
dc.citation.issue1-4
dc.citation.spage336
dc.citation.epage342
dc.identifier.wos000180675100042
dc.identifier.doi10.1016/S0169-4332(02)01156-X
dc.citation.otherArticle Number: PII S0169-4332(02)01156-X
dc.citation.rankM22
dc.identifier.scopus2-s2.0-0037204393


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