Amorphous-iron disilicide: A promising semiconductor
Apstrakt
We report here the synthesis and the measurements of the microstructural and optical properties of a promising semiconductor, amorphous-iron disilicide. The material was obtained by ion-beam mixing of Fe layers on Si, with Ar8+ ions, at 300 degreesC. Optical absorption measurements indicate a semiconductor with a direct band gap of 0.88 eV. The significance of this discovery is that it demonstrates the existence of such a material. It should be possible to synthesize by other techniques and could be applied in large-area electronics. (C) 2001 American Institute of Physics.
Izvor:
Applied Physics Letters, 2001, 79, 10, 1438-1440
DOI: 10.1063/1.1400760
ISSN: 0003-6951
WoS: 000170647200010
Scopus: 2-s2.0-0346606835
Kolekcije
Institucija/grupa
VinčaTY - JOUR AU - Milosavljević, Momir AU - Shao, G AU - Bibić, Nataša M. AU - McKinty, CN AU - Jeynes, C AU - Homewood, Kevin P. PY - 2001 UR - https://vinar.vin.bg.ac.rs/handle/123456789/2453 AB - We report here the synthesis and the measurements of the microstructural and optical properties of a promising semiconductor, amorphous-iron disilicide. The material was obtained by ion-beam mixing of Fe layers on Si, with Ar8+ ions, at 300 degreesC. Optical absorption measurements indicate a semiconductor with a direct band gap of 0.88 eV. The significance of this discovery is that it demonstrates the existence of such a material. It should be possible to synthesize by other techniques and could be applied in large-area electronics. (C) 2001 American Institute of Physics. T2 - Applied Physics Letters T1 - Amorphous-iron disilicide: A promising semiconductor VL - 79 IS - 10 SP - 1438 EP - 1440 DO - 10.1063/1.1400760 ER -
@article{ author = "Milosavljević, Momir and Shao, G and Bibić, Nataša M. and McKinty, CN and Jeynes, C and Homewood, Kevin P.", year = "2001", abstract = "We report here the synthesis and the measurements of the microstructural and optical properties of a promising semiconductor, amorphous-iron disilicide. The material was obtained by ion-beam mixing of Fe layers on Si, with Ar8+ ions, at 300 degreesC. Optical absorption measurements indicate a semiconductor with a direct band gap of 0.88 eV. The significance of this discovery is that it demonstrates the existence of such a material. It should be possible to synthesize by other techniques and could be applied in large-area electronics. (C) 2001 American Institute of Physics.", journal = "Applied Physics Letters", title = "Amorphous-iron disilicide: A promising semiconductor", volume = "79", number = "10", pages = "1438-1440", doi = "10.1063/1.1400760" }
Milosavljević, M., Shao, G., Bibić, N. M., McKinty, C., Jeynes, C.,& Homewood, K. P.. (2001). Amorphous-iron disilicide: A promising semiconductor. in Applied Physics Letters, 79(10), 1438-1440. https://doi.org/10.1063/1.1400760
Milosavljević M, Shao G, Bibić NM, McKinty C, Jeynes C, Homewood KP. Amorphous-iron disilicide: A promising semiconductor. in Applied Physics Letters. 2001;79(10):1438-1440. doi:10.1063/1.1400760 .
Milosavljević, Momir, Shao, G, Bibić, Nataša M., McKinty, CN, Jeynes, C, Homewood, Kevin P., "Amorphous-iron disilicide: A promising semiconductor" in Applied Physics Letters, 79, no. 10 (2001):1438-1440, https://doi.org/10.1063/1.1400760 . .