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dc.creatorLončar, Boris B.
dc.creatorOsmokrovic, P
dc.creatorStojanovic, M
dc.creatorStanković, Srboljub J.
dc.date.accessioned2018-03-01T18:58:08Z
dc.date.available2018-03-01T18:58:08Z
dc.date.issued2001
dc.identifier.issn0021-4922 (print)
dc.identifier.urihttp://vinar.vin.bg.ac.rs/handle/123456789/2427
dc.description.abstractIn this study, we examine the reliability of erasable programmable read only memory (EPROM) and electrically erasable programmable read only memory (EEPROM) components under the influence of gamma radiation. This problem has significance in military industry and space technology Total dose results are presented for the JL 27C512D EPROM and 28C64C EEPROM components. There is evidence that EPROM components have better radioactive reliability than EEPROM components. Also, the changes to the EPROM are reversible, and after erasing and reprogramming all EPROM components are functional. On the other hand, changes to the EEPROM are irreversible, and under the influence of gamma radiation, all EEPROM components became permanently nonfunctional. The obtained results are analyzed and explained via the interaction of gamma radiation with oxide layers.en
dc.rightsrestrictedAccessen
dc.sourceJapanese Journal of Applied Physics Part 1-Regular Papers Short Notes and Review Papersen
dc.subjectEPROMen
dc.subjectEEPROMen
dc.subjectradioactive reliabilityen
dc.subjectgamma radiationen
dc.subjectdefectsen
dc.titleRadioactive reliability of programmable memoriesen
dc.typearticleen
dcterms.abstractЛонцар, Б; Осмокровиц, П; Стојановиц, М; Станковиц, С;
dc.citation.volume40
dc.citation.issue2B
dc.citation.spage1126
dc.citation.epage1129
dc.identifier.wos000168355800054
dc.identifier.doi10.1143/JJAP.40.1126
dc.citation.rankM22


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