Mixing and silicide formation during Xe-ion beam irradiations of Ta/Si bilayers
Апстракт
Thin Ta layers deposited on Si (100) substrates were irradiated with 475 keV Xe+ ions to fluences of (0.5-2) x 10(16) ions/cm(2) at temperatures between room temperature and 400 degreesC. By means of Rutherford Backscattering Spectrometry, the interface mixing and tantalum silicide formation were monitored as function of the ion fluence. TaSi2 phase formation was verified using X-ray diffraction. The interface broadening variance was found to depend linearly on the ion fluence and was explained with the help of a compound formation model involving global thermal spikes.
Извор:
Physica Status Solidi. B: Basic Research, 2000, 222, 1, 295-302
DOI: 10.1002/1521-3951(200011)222:1 LT 295::AID-PSSB295 GT 3.3.CO;2-5
ISSN: 0370-1972
WoS: 000165822100027
[ Google Scholar ]Колекције
Институција/група
VinčaTY - JOUR AU - Dhar, S AU - Milosavljević, Momir AU - Bibić, Nataša M. AU - Lieb, KP PY - 2000 UR - https://vinar.vin.bg.ac.rs/handle/123456789/2396 AB - Thin Ta layers deposited on Si (100) substrates were irradiated with 475 keV Xe+ ions to fluences of (0.5-2) x 10(16) ions/cm(2) at temperatures between room temperature and 400 degreesC. By means of Rutherford Backscattering Spectrometry, the interface mixing and tantalum silicide formation were monitored as function of the ion fluence. TaSi2 phase formation was verified using X-ray diffraction. The interface broadening variance was found to depend linearly on the ion fluence and was explained with the help of a compound formation model involving global thermal spikes. T2 - Physica Status Solidi. B: Basic Research T1 - Mixing and silicide formation during Xe-ion beam irradiations of Ta/Si bilayers VL - 222 IS - 1 SP - 295 EP - 302 DO - 10.1002/1521-3951(200011)222:1 LT 295::AID-PSSB295 GT 3.3.CO;2-5 ER -
@article{ author = "Dhar, S and Milosavljević, Momir and Bibić, Nataša M. and Lieb, KP", year = "2000", abstract = "Thin Ta layers deposited on Si (100) substrates were irradiated with 475 keV Xe+ ions to fluences of (0.5-2) x 10(16) ions/cm(2) at temperatures between room temperature and 400 degreesC. By means of Rutherford Backscattering Spectrometry, the interface mixing and tantalum silicide formation were monitored as function of the ion fluence. TaSi2 phase formation was verified using X-ray diffraction. The interface broadening variance was found to depend linearly on the ion fluence and was explained with the help of a compound formation model involving global thermal spikes.", journal = "Physica Status Solidi. B: Basic Research", title = "Mixing and silicide formation during Xe-ion beam irradiations of Ta/Si bilayers", volume = "222", number = "1", pages = "295-302", doi = "10.1002/1521-3951(200011)222:1 LT 295::AID-PSSB295 GT 3.3.CO;2-5" }
Dhar, S., Milosavljević, M., Bibić, N. M.,& Lieb, K.. (2000). Mixing and silicide formation during Xe-ion beam irradiations of Ta/Si bilayers. in Physica Status Solidi. B: Basic Research, 222(1), 295-302. https://doi.org/10.1002/1521-3951(200011)222:1 LT 295::AID-PSSB295 GT 3.3.CO;2-5
Dhar S, Milosavljević M, Bibić NM, Lieb K. Mixing and silicide formation during Xe-ion beam irradiations of Ta/Si bilayers. in Physica Status Solidi. B: Basic Research. 2000;222(1):295-302. doi:10.1002/1521-3951(200011)222:1 LT 295::AID-PSSB295 GT 3.3.CO;2-5 .
Dhar, S, Milosavljević, Momir, Bibić, Nataša M., Lieb, KP, "Mixing and silicide formation during Xe-ion beam irradiations of Ta/Si bilayers" in Physica Status Solidi. B: Basic Research, 222, no. 1 (2000):295-302, https://doi.org/10.1002/1521-3951(200011)222:1 LT 295::AID-PSSB295 GT 3.3.CO;2-5 . .