Raman spectroscopy of impurity states in gallium-doped PbTe
Abstract
We present Raman spectra and results of galvanomagnetic measurements of PbTe single crystals, doped with gallium, between 10 and 300 K. The effect of persistent photoconductivity depends on the gallium concentration. In all samples well-resolved peaks were observed at about 104 cm(-1) (impurity-induced PbTe LO mode) and 166 cm(-1) at all temperatures. Another mode appears at about 117 cm(-1) at temperature below 250 K. One additional mode, at about 188 cm(-1), is observed in PbTe + 0.4 at% Ga. These modes are discussed in terms of local vibrations of impurities corresponding to different Ga charge states.
Source:
Journal of Physics: Condensed Matter, 2000, 12, 40, 8737-8744
DOI: 10.1088/0953-8984/12/40/315
ISSN: 0953-8984
WoS: 000090090000018
Scopus: 2-s2.0-0343877284
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Institution/Community
VinčaTY - JOUR AU - Romčević, Maja J. AU - Romčević, Nebojša Ž. AU - Khokhlov, DR AU - Ivanchik, II PY - 2000 UR - https://vinar.vin.bg.ac.rs/handle/123456789/2386 AB - We present Raman spectra and results of galvanomagnetic measurements of PbTe single crystals, doped with gallium, between 10 and 300 K. The effect of persistent photoconductivity depends on the gallium concentration. In all samples well-resolved peaks were observed at about 104 cm(-1) (impurity-induced PbTe LO mode) and 166 cm(-1) at all temperatures. Another mode appears at about 117 cm(-1) at temperature below 250 K. One additional mode, at about 188 cm(-1), is observed in PbTe + 0.4 at% Ga. These modes are discussed in terms of local vibrations of impurities corresponding to different Ga charge states. T2 - Journal of Physics: Condensed Matter T1 - Raman spectroscopy of impurity states in gallium-doped PbTe VL - 12 IS - 40 SP - 8737 EP - 8744 DO - 10.1088/0953-8984/12/40/315 ER -
@article{ author = "Romčević, Maja J. and Romčević, Nebojša Ž. and Khokhlov, DR and Ivanchik, II", year = "2000", abstract = "We present Raman spectra and results of galvanomagnetic measurements of PbTe single crystals, doped with gallium, between 10 and 300 K. The effect of persistent photoconductivity depends on the gallium concentration. In all samples well-resolved peaks were observed at about 104 cm(-1) (impurity-induced PbTe LO mode) and 166 cm(-1) at all temperatures. Another mode appears at about 117 cm(-1) at temperature below 250 K. One additional mode, at about 188 cm(-1), is observed in PbTe + 0.4 at% Ga. These modes are discussed in terms of local vibrations of impurities corresponding to different Ga charge states.", journal = "Journal of Physics: Condensed Matter", title = "Raman spectroscopy of impurity states in gallium-doped PbTe", volume = "12", number = "40", pages = "8737-8744", doi = "10.1088/0953-8984/12/40/315" }
Romčević, M. J., Romčević, N. Ž., Khokhlov, D.,& Ivanchik, I.. (2000). Raman spectroscopy of impurity states in gallium-doped PbTe. in Journal of Physics: Condensed Matter, 12(40), 8737-8744. https://doi.org/10.1088/0953-8984/12/40/315
Romčević MJ, Romčević NŽ, Khokhlov D, Ivanchik I. Raman spectroscopy of impurity states in gallium-doped PbTe. in Journal of Physics: Condensed Matter. 2000;12(40):8737-8744. doi:10.1088/0953-8984/12/40/315 .
Romčević, Maja J., Romčević, Nebojša Ž., Khokhlov, DR, Ivanchik, II, "Raman spectroscopy of impurity states in gallium-doped PbTe" in Journal of Physics: Condensed Matter, 12, no. 40 (2000):8737-8744, https://doi.org/10.1088/0953-8984/12/40/315 . .