Direct synthesis of beta-FeSi2 by ion beam mixing of Fe/Si bilayers

dc.creator	Milosavljević, Momir
dc.creator	Dhar, S
dc.creator	Schaaf, P
dc.creator	Bibić, Nataša M.
dc.creator	Han, M
dc.creator	Lieb, KP
dc.date.accessioned	2018-03-01T18:52:51Z
dc.date.available	2018-03-01T18:52:51Z
dc.date.issued	2000
dc.identifier.issn	0947-8396
dc.identifier.uri	https://vinar.vin.bg.ac.rs/handle/123456789/2366
dc.description.abstract	The iron di-silicide beta-FeSi2 is a promising direct band gap semiconductor but difficult to produce. Here, the successful direct synthesis of this phase by ion beam mixing of Fe/Si bilayers at temperatures in the range of 450 to 550 degrees C is reported. The obtained single-phase beta-FeSi2 layers and their structure are confirmed by Rutherford backscattering spectrometry, X-ray diffraction and conversion electron Mossbauer spectroscopy. PACS: 61.80.Jh; 68.55.Nq; 61.82.Fk.	en
dc.rights	restrictedAccess	en
dc.source	Applied Physics. A: Materials Science and Processing	en
dc.title	Direct synthesis of beta-FeSi2 by ion beam mixing of Fe/Si bilayers	en
dc.type	article	en
dcterms.abstract	Милосављевић Момир; Дхар, С; Бибиц, Н; Хан, М; Лиеб, КП; Сцхааф, П;
dc.citation.volume	71
dc.citation.issue	1
dc.citation.spage	43
dc.citation.epage	45
dc.identifier.wos	000088498500008
dc.citation.rank	M21a
dc.identifier.rcub	https://hdl.handle.net/21.15107/rcub_vinar_2366

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