Direct synthesis of beta-FeSi2 by ion beam mixing of Fe/Si bilayers
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The iron di-silicide beta-FeSi2 is a promising direct band gap semiconductor but difficult to produce. Here, the successful direct synthesis of this phase by ion beam mixing of Fe/Si bilayers at temperatures in the range of 450 to 550 degrees C is reported. The obtained single-phase beta-FeSi2 layers and their structure are confirmed by Rutherford backscattering spectrometry, X-ray diffraction and conversion electron Mossbauer spectroscopy. PACS: 61.80.Jh; 68.55.Nq; 61.82.Fk.
Извор:Applied Physics. A: Materials Science and Processing, 2000, 71, 1, 43-45
ISSN: 0947-8396 (print)