Self consistent fitting method for defect analysis by low-frequency noise measurements in reverse biased p-n junctions
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1997
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A method for analysis of defects close to a metallurgical junction in the space charge region of a reverse biased degraded p-n junction by low-frequency current noise and current-voltage measurements at room temperature is given. The current g-r noise spectrum (separated from the total low-frequency noise spectrum) and the current-voltage characteristics are used to calculate defect parameters like defect density, energy level, capture coefficients and defect region boundary by fitting the theoretical and experimental results in a self-consistent way. This procedure is used to analyse the defects in a silicon field plated PIN photodiode with a soft current-voltage characteristic. II is found that the defects which are responsible for the soft current-voltage characteristics and low-frequency excess g-r noise are distributed up to a distance of 3 mu m from the metallurgical junction. (C) 1997 Elsevier Science Ltd.
Izvor:
Solid-state Electronics, 1997, 41, 8, 1127-1131Finansiranje / projekti:
- Serbian Ministry of Science and Technology [Contract 10805/96]
DOI: 10.1016/S0038-1101(97)00058-0
ISSN: 0038-1101
WoS: A1997XM75200011
Scopus: 2-s2.0-0031210490
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Institucija/grupa
VinčaTY - JOUR AU - Jevtić, Milan M. AU - Lazović, M. V. PY - 1997 UR - https://vinar.vin.bg.ac.rs/handle/123456789/2077 AB - A method for analysis of defects close to a metallurgical junction in the space charge region of a reverse biased degraded p-n junction by low-frequency current noise and current-voltage measurements at room temperature is given. The current g-r noise spectrum (separated from the total low-frequency noise spectrum) and the current-voltage characteristics are used to calculate defect parameters like defect density, energy level, capture coefficients and defect region boundary by fitting the theoretical and experimental results in a self-consistent way. This procedure is used to analyse the defects in a silicon field plated PIN photodiode with a soft current-voltage characteristic. II is found that the defects which are responsible for the soft current-voltage characteristics and low-frequency excess g-r noise are distributed up to a distance of 3 mu m from the metallurgical junction. (C) 1997 Elsevier Science Ltd. T2 - Solid-state Electronics T1 - Self consistent fitting method for defect analysis by low-frequency noise measurements in reverse biased p-n junctions VL - 41 IS - 8 SP - 1127 EP - 1131 DO - 10.1016/S0038-1101(97)00058-0 ER -
@article{ author = "Jevtić, Milan M. and Lazović, M. V.", year = "1997", abstract = "A method for analysis of defects close to a metallurgical junction in the space charge region of a reverse biased degraded p-n junction by low-frequency current noise and current-voltage measurements at room temperature is given. The current g-r noise spectrum (separated from the total low-frequency noise spectrum) and the current-voltage characteristics are used to calculate defect parameters like defect density, energy level, capture coefficients and defect region boundary by fitting the theoretical and experimental results in a self-consistent way. This procedure is used to analyse the defects in a silicon field plated PIN photodiode with a soft current-voltage characteristic. II is found that the defects which are responsible for the soft current-voltage characteristics and low-frequency excess g-r noise are distributed up to a distance of 3 mu m from the metallurgical junction. (C) 1997 Elsevier Science Ltd.", journal = "Solid-state Electronics", title = "Self consistent fitting method for defect analysis by low-frequency noise measurements in reverse biased p-n junctions", volume = "41", number = "8", pages = "1127-1131", doi = "10.1016/S0038-1101(97)00058-0" }
Jevtić, M. M.,& Lazović, M. V.. (1997). Self consistent fitting method for defect analysis by low-frequency noise measurements in reverse biased p-n junctions. in Solid-state Electronics, 41(8), 1127-1131. https://doi.org/10.1016/S0038-1101(97)00058-0
Jevtić MM, Lazović MV. Self consistent fitting method for defect analysis by low-frequency noise measurements in reverse biased p-n junctions. in Solid-state Electronics. 1997;41(8):1127-1131. doi:10.1016/S0038-1101(97)00058-0 .
Jevtić, Milan M., Lazović, M. V., "Self consistent fitting method for defect analysis by low-frequency noise measurements in reverse biased p-n junctions" in Solid-state Electronics, 41, no. 8 (1997):1127-1131, https://doi.org/10.1016/S0038-1101(97)00058-0 . .