The effect of rapid thermal annealing on structural and electrical properties of TiB2 thin films
Само за регистроване кориснике
1997
Аутори
Todorović, BratislavJokić, Todor Lj.
Rakočević, Zlatko Lj.
Marković, Zoran M.
Gaković, Biljana M.
Nenadović, Tomislav M.
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
This work reports on the effect of post-deposition rapid thermal annealing on the structural and electrical properties of deposited TiB2 thin films. The TiB2 thin films, thicknesses from 9 to 450 nm, were deposited by e-beam evaporation on high resistivity and thermally oxidized silicon wafers. The resistivity of as-deposited films varied from 1820 mu Omega cm for the thinnest film to 267 mu Omega cm for thicknesses greater than 100 nm. In the thickness range from 100 to 450 nm, the resistivity of TiB2 films has a constant value of 267 mu Omega cm. A rapid thermal annealing (RTA) technique has been used to reduce the resistivity of deposited films. During vacuum annealing at 7 x 10(-3) Pa, the film resistivity decreases from 267 mu Omega cm at 200 degrees C to 16 mu Omega cm at 1200 degrees C. Heating cycles during RTA were a sequence of 10 s. According to scanning tunneling microscopy analysis, the decrease in resistivity may be attributed to a grain growth through polycrystalline rec...rystallization, as well as to an increase in film density. The grain size and mean surface roughness of annealed films increase with annealing temperature. At the same time, the conductivity of the annealed samples increases linearly with grain size. The obtained results show that RTA technique has a great potential for low resistivity TiB, formation. (C) 1997 Published by Elsevier Science S.A.
Кључне речи:
annealing / electrical properties and measurements / evaporation / scanning tunnelling microscopyИзвор:
Thin Solid Films, 1997, 300, 1-2, 272-277Финансирање / пројекти:
- Ministry of Science and Technology of the Republic of Serbia
DOI: 10.1016/S0040-6090(96)09458-8
ISSN: 0040-6090
WoS: A1997XH76300040
Scopus: 2-s2.0-0031143319
Институција/група
VinčaTY - JOUR AU - Todorović, Bratislav AU - Jokić, Todor Lj. AU - Rakočević, Zlatko Lj. AU - Marković, Zoran M. AU - Gaković, Biljana M. AU - Nenadović, Tomislav M. PY - 1997 UR - https://vinar.vin.bg.ac.rs/handle/123456789/2074 AB - This work reports on the effect of post-deposition rapid thermal annealing on the structural and electrical properties of deposited TiB2 thin films. The TiB2 thin films, thicknesses from 9 to 450 nm, were deposited by e-beam evaporation on high resistivity and thermally oxidized silicon wafers. The resistivity of as-deposited films varied from 1820 mu Omega cm for the thinnest film to 267 mu Omega cm for thicknesses greater than 100 nm. In the thickness range from 100 to 450 nm, the resistivity of TiB2 films has a constant value of 267 mu Omega cm. A rapid thermal annealing (RTA) technique has been used to reduce the resistivity of deposited films. During vacuum annealing at 7 x 10(-3) Pa, the film resistivity decreases from 267 mu Omega cm at 200 degrees C to 16 mu Omega cm at 1200 degrees C. Heating cycles during RTA were a sequence of 10 s. According to scanning tunneling microscopy analysis, the decrease in resistivity may be attributed to a grain growth through polycrystalline recrystallization, as well as to an increase in film density. The grain size and mean surface roughness of annealed films increase with annealing temperature. At the same time, the conductivity of the annealed samples increases linearly with grain size. The obtained results show that RTA technique has a great potential for low resistivity TiB, formation. (C) 1997 Published by Elsevier Science S.A. T2 - Thin Solid Films T1 - The effect of rapid thermal annealing on structural and electrical properties of TiB2 thin films VL - 300 IS - 1-2 SP - 272 EP - 277 DO - 10.1016/S0040-6090(96)09458-8 ER -
@article{ author = "Todorović, Bratislav and Jokić, Todor Lj. and Rakočević, Zlatko Lj. and Marković, Zoran M. and Gaković, Biljana M. and Nenadović, Tomislav M.", year = "1997", abstract = "This work reports on the effect of post-deposition rapid thermal annealing on the structural and electrical properties of deposited TiB2 thin films. The TiB2 thin films, thicknesses from 9 to 450 nm, were deposited by e-beam evaporation on high resistivity and thermally oxidized silicon wafers. The resistivity of as-deposited films varied from 1820 mu Omega cm for the thinnest film to 267 mu Omega cm for thicknesses greater than 100 nm. In the thickness range from 100 to 450 nm, the resistivity of TiB2 films has a constant value of 267 mu Omega cm. A rapid thermal annealing (RTA) technique has been used to reduce the resistivity of deposited films. During vacuum annealing at 7 x 10(-3) Pa, the film resistivity decreases from 267 mu Omega cm at 200 degrees C to 16 mu Omega cm at 1200 degrees C. Heating cycles during RTA were a sequence of 10 s. According to scanning tunneling microscopy analysis, the decrease in resistivity may be attributed to a grain growth through polycrystalline recrystallization, as well as to an increase in film density. The grain size and mean surface roughness of annealed films increase with annealing temperature. At the same time, the conductivity of the annealed samples increases linearly with grain size. The obtained results show that RTA technique has a great potential for low resistivity TiB, formation. (C) 1997 Published by Elsevier Science S.A.", journal = "Thin Solid Films", title = "The effect of rapid thermal annealing on structural and electrical properties of TiB2 thin films", volume = "300", number = "1-2", pages = "272-277", doi = "10.1016/S0040-6090(96)09458-8" }
Todorović, B., Jokić, T. Lj., Rakočević, Z. Lj., Marković, Z. M., Gaković, B. M.,& Nenadović, T. M.. (1997). The effect of rapid thermal annealing on structural and electrical properties of TiB2 thin films. in Thin Solid Films, 300(1-2), 272-277. https://doi.org/10.1016/S0040-6090(96)09458-8
Todorović B, Jokić TL, Rakočević ZL, Marković ZM, Gaković BM, Nenadović TM. The effect of rapid thermal annealing on structural and electrical properties of TiB2 thin films. in Thin Solid Films. 1997;300(1-2):272-277. doi:10.1016/S0040-6090(96)09458-8 .
Todorović, Bratislav, Jokić, Todor Lj., Rakočević, Zlatko Lj., Marković, Zoran M., Gaković, Biljana M., Nenadović, Tomislav M., "The effect of rapid thermal annealing on structural and electrical properties of TiB2 thin films" in Thin Solid Films, 300, no. 1-2 (1997):272-277, https://doi.org/10.1016/S0040-6090(96)09458-8 . .