A method for separating the effects of interface from border and oxide trapped charge densities in MOS transistors
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1997
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This paper presents a procedure for a more accurate separation of interface trap effects in the presence of large border trap densities after irradiation of MOS devices. It is based on the standard subthreshold technique, but a special measurement procedure is applied which eliminates the drifts produced by border traps via the tunneling effect. The procedure is demonstrated on pMOS dosimetric transistors, and it is shown that it gives different and, we claim, better estimates of interface trap density than standard techniques. (C) 1997 Elsevier Science Ltd.
Izvor:
Microelectronics and Reliability, 1997, 37, 7, 1147-1150
DOI: 10.1016/S0026-2714(96)00277-6
ISSN: 0026-2714
WoS: A1997WY85100019
Scopus: 2-s2.0-0031191049
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VinčaTY - JOUR AU - Savić, Zoran AU - Rađenović, Branislav PY - 1997 UR - https://vinar.vin.bg.ac.rs/handle/123456789/2061 AB - This paper presents a procedure for a more accurate separation of interface trap effects in the presence of large border trap densities after irradiation of MOS devices. It is based on the standard subthreshold technique, but a special measurement procedure is applied which eliminates the drifts produced by border traps via the tunneling effect. The procedure is demonstrated on pMOS dosimetric transistors, and it is shown that it gives different and, we claim, better estimates of interface trap density than standard techniques. (C) 1997 Elsevier Science Ltd. T2 - Microelectronics and Reliability T1 - A method for separating the effects of interface from border and oxide trapped charge densities in MOS transistors VL - 37 IS - 7 SP - 1147 EP - 1150 DO - 10.1016/S0026-2714(96)00277-6 ER -
@article{ author = "Savić, Zoran and Rađenović, Branislav", year = "1997", abstract = "This paper presents a procedure for a more accurate separation of interface trap effects in the presence of large border trap densities after irradiation of MOS devices. It is based on the standard subthreshold technique, but a special measurement procedure is applied which eliminates the drifts produced by border traps via the tunneling effect. The procedure is demonstrated on pMOS dosimetric transistors, and it is shown that it gives different and, we claim, better estimates of interface trap density than standard techniques. (C) 1997 Elsevier Science Ltd.", journal = "Microelectronics and Reliability", title = "A method for separating the effects of interface from border and oxide trapped charge densities in MOS transistors", volume = "37", number = "7", pages = "1147-1150", doi = "10.1016/S0026-2714(96)00277-6" }
Savić, Z.,& Rađenović, B.. (1997). A method for separating the effects of interface from border and oxide trapped charge densities in MOS transistors. in Microelectronics and Reliability, 37(7), 1147-1150. https://doi.org/10.1016/S0026-2714(96)00277-6
Savić Z, Rađenović B. A method for separating the effects of interface from border and oxide trapped charge densities in MOS transistors. in Microelectronics and Reliability. 1997;37(7):1147-1150. doi:10.1016/S0026-2714(96)00277-6 .
Savić, Zoran, Rađenović, Branislav, "A method for separating the effects of interface from border and oxide trapped charge densities in MOS transistors" in Microelectronics and Reliability, 37, no. 7 (1997):1147-1150, https://doi.org/10.1016/S0026-2714(96)00277-6 . .