A method for separating the effects of interface from border and oxide trapped charge densities in MOS transistors
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This paper presents a procedure for a more accurate separation of interface trap effects in the presence of large border trap densities after irradiation of MOS devices. It is based on the standard subthreshold technique, but a special measurement procedure is applied which eliminates the drifts produced by border traps via the tunneling effect. The procedure is demonstrated on pMOS dosimetric transistors, and it is shown that it gives different and, we claim, better estimates of interface trap density than standard techniques. (C) 1997 Elsevier Science Ltd.
Извор:Microelectronics and Reliability, 1997, 37, 7, 1147-1150
ISSN: 0026-2714 (print)