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dc.creatorFetahovic, Irfan S.
dc.creatorDolicanin, Edin C.
dc.creatorLazarević, Đorđe R.
dc.creatorLončar, Boris B.
dc.date.accessioned2018-03-01T18:09:04Z
dc.date.available2018-03-01T18:09:04Z
dc.date.issued2017
dc.identifier.issn1451-3994 (print)
dc.identifier.urihttp://vinar.vin.bg.ac.rs/handle/123456789/1938
dc.description.abstractIn this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments.en
dc.relationinfo:eu-repo/grantAgreement/MESTD/Basic Research (BR or ON)/171007/RS//
dc.rightsopenAccessen
dc.sourceNuclear technology and radiation protectionen
dc.subjectnon-volatile memoryen
dc.subjectradiation effecten
dc.subjectresistive RAMen
dc.subjectferroelectric RAMen
dc.subjectmagneto-resistive RAMen
dc.subjectphase change memoryen
dc.titleOverview of Radiation Effects on Emerging Non-Volatile Memory Technologiesen
dc.typearticleen
dcterms.abstractФетаховиц, Ирфан С.; Лазаревиц, Дјордје Р.; Лонцар, Борис Б.; Долицанин, Един Ц.;
dc.citation.volume32
dc.citation.issue4
dc.citation.spage381
dc.citation.epage392
dc.identifier.wos000423779500011
dc.identifier.doi10.2298/NTRP1704381F
dc.identifier.scopus2-s2.0-85041121133
dc.identifier.fulltexthttp://vinar.vin.bg.ac.rs//bitstream/id/12215/1934.pdf


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