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dc.creatorRašković-Lovre, Željka
dc.creatorMongstad, T. T.
dc.creatorKarazhanov, S.
dc.creatorYou, C. C.
dc.creatorLindberg, S.
dc.creatorLelis, M.
dc.creatorMilcius, D.
dc.creatorDeledda, S.
dc.date.accessioned2018-03-01T17:59:24Z
dc.date.available2018-03-01T17:59:24Z
dc.date.issued2017
dc.identifier.issn2053-1591 (print)
dc.identifier.urihttp://vinar.vin.bg.ac.rs/handle/123456789/1825
dc.description.abstractIt is well known that optical properties of Mg-Ni-H films can be tuned by hydrogen uptake from Mg-Ni-H and upload into Mg-Ni systems. In this work we show that modulation of optical properties of Mg-Ni-H can take place as a result of thermal processing in air as well. When reactively sputter deposited semiconducting Mg-Ni-H films are annealed at temperatures of 200 degrees C-300 degrees C in air, gradual band gap change from 1.6 to 2.04 eV occurs followed by change in optical appearance, from brown, to orange and, subsequently, to yellow. We investigate this phenomenon using optical and structural characterization tools, and link the changes to an atomic rearrangement and a structure reordering of the [NiH4]4-complex. The films are x-ray amorphous up to 280 degrees C, where above this temperature an increase in crystallite size and establishing of long-range order lead to a formation of the cubic crystalline phase of Mg2NiH4. Also, the results suggest that even though annealing was conducted in air, no oxidation or other changes in chemical composition of the bulk of the film occurred. Therefore, the band gap of this semiconductor can be tuned permanently by heat treatment, in the range from 1.6 to 2 eV.en
dc.relationinfo:eu-repo/grantAgreement/MESTD/Integrated and Interdisciplinary Research (IIR or III)/45012/RS//
dc.relationResearch Council of Norway through the Yggdrasil mobility program [2012-219352/F11], ISP project [181884], FRINATEK, Institute for Energy Technology, Research Council of Norway [197411/V30]
dc.rightsrestrictedAccessen
dc.sourceMaterials Research Expressen
dc.subjectmetal hydridesen
dc.subjectthin filmsen
dc.subjectsemiconductorsen
dc.titleAnnealing-induced structural rearrangement and optical band gap change in Mg-Ni-H thin filmsen
dc.typearticleen
dcterms.abstractРасковиц-Ловре, З.; Монгстад, Т. Т.; Yоу, Ц. Ц.; Линдберг, С.; Милциус, Д.; Деледда, С.; Лелис, М.; Каразханов, С.;
dc.citation.volume4
dc.citation.issue1
dc.identifier.wos000415117200002
dc.identifier.doi10.1088/2053-1591/4/1/016405
dc.citation.otherArticle Number: 016405
dc.identifier.scopus2-s2.0-85011653975


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