Приказ основних података о документу

dc.creatorShanavas, K. V.
dc.creatorPopović, Zoran S.
dc.creatorSatpathy, S.
dc.date.accessioned2018-03-01T15:29:03Z
dc.date.available2018-03-01T15:29:03Z
dc.date.issued2014
dc.identifier.issn1098-0121 (print)
dc.identifier.issn1550-235X (electronic)
dc.identifier.urihttp://vinar.vin.bg.ac.rs/123456789/146
dc.description.abstractWe show that the Rashba spin-orbit interaction in d electron solids, which originates from the broken inversion symmetry at surfaces or interfaces, is strongly dependent on the orbital characters of the bands involved. This is studied by developing a tight-binding model in the presence of a uniform perpendicular electric field and spin-orbit coupling. We argue that for valence electrons, the spin-orbit coupling strength scales only as the square of the atomic number. The electric field distorts the d orbitals through the admixture of p and f states and also introduces intersite overlap parameters. Expressions for Rashba coefficients for the bands are obtained in both weak and strong spin-orbit interaction limits and are shown to be orbital dependent. The results are compared with first-principles calculations for model systems, showing good agreement. Our study demonstrates the orbital-dependent gate control of the Rashba effect for the purposes of oxide electronics.en
dc.relationUS Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-FG02-00ER45818]
dc.rightsclosedAccessen
dc.sourcePhysical Review B: Condensed Matter and Materials Physicsen
dc.titleTheoretical model for Rashba spin-orbit interaction in d electronsen
dc.typearticleen
dcterms.abstractСатпатхy, С.; Поповиц, З. С.; Сханавас, К. В.;
dc.citation.volume90
dc.citation.issue16
dc.identifier.wos000342795100005
dc.identifier.doi10.1103/PhysRevB.90.165108
dc.citation.otherArticle Number: 165108
dc.citation.rankM21
dc.identifier.scopus2-s2.0-84908032376


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Приказ основних података о документу