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dc.creatorJovanović, Zoran M.
dc.creatorSpreitzer, Matjaž
dc.creatorGabor, U.
dc.creatorSuvorov, D.
dc.date.accessioned2018-03-01T17:07:40Z
dc.date.available2018-03-01T17:07:40Z
dc.date.issued2016
dc.identifier.issn2046-2069 (print)
dc.identifier.urihttp://vinar.vin.bg.ac.rs/handle/123456789/1233
dc.description.abstractThe deoxidation and passivation of a silicon surface represents one of the most important steps in the successful integration of functional oxides with silicon. Due to its reactivity and dissimilar properties with respect to oxides, silicon surfaces are conditioned using various buffer systems. Despite the quality of the resulting surface, these Sr-based buffers have not been commercialized because of the reactivity of the metallic Sr. SrO has demonstrated properties that are competitive with metallic Sr, but a successful integration with silicon has not yet been proven. In the present study we have determined the optimal pulsed-laser deposition (PLD) conditions for the SrO-induced deoxidation of a silicon surface, which results in a 2 x 1 reconstructed surface. Additionally, the as-prepared surface is oxide-free and atomically flat. The results show that the amount of SrO plays the most critical role in the optimization of the whole process. Deposited in batch mode, the amount of SrO affects the morphologies of the surfaces, which change from a dimerized surface to SrO islands and a polycrystalline layer in the final stage. However, in the case of an insufficient amount of deposited SrO, pits are formed on the surface, drastically increasing its roughness. The successful optimization of the PLD conditions for the formation of a SrO buffer layer opens a new pathway for interfacing oxides with silicon.en
dc.relationSlovenian Research Agency [J2-6759], Slovene Human Resources and Scholarship Fund [11013-37/2012]
dc.rightsrestrictedAccessen
dc.sourceRSC Advancesen
dc.titleControl of SrO buffer-layer formation on Si(001) using the pulsed-laser deposition techniqueen
dc.typearticleen
dcterms.abstractГабор, У.; Јовановић Зоран; Спреитзер, М.; Суворов, Д.;
dc.citation.volume6
dc.citation.issue85
dc.citation.spage82150
dc.citation.epage82156
dc.identifier.wos000382776000088
dc.identifier.doi10.1039/c6ra16311d
dc.citation.rankM21
dc.identifier.scopus2-s2.0-84984846089


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