Electrical switching of magnetization in a layer of alpha-Fe with a naturally hydroxidized surface
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АуториPolushkin, N. I.
Duarte, A. C.
Ventura, J. O.
Araujo, J. P.
Kakazei, G. N.
Adeyeye, A. O.
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It is well established that electrical methods, such as the application of a high-density (10(10)-10(11) A m(-2)) current, can be employed for the switching of magnetization in thin ferromagnetic films and hetero-structures after their patterning at the nanoscale. We find that magnetization is robustly switchable, i.e., at macroscopic scales (up to a few millimeters in lateral directions), in a single similar to 30 nm-thick layer of alpha-Fe upon discharging a capacitor through the sample. Interestingly, samples sputtered at enhanced base pressures (similar to 10(-6) mbar) exhibited much lower switching thresholds with no bias field, while their electrical conductivity is anomalously high ( higher than that in bulk of alpha-Fe). We argue that the observed enhancement of conduction relates to the mixed oxide/oxyhydroxide (FeO/FeOOH) layer formed naturally on the top of our alpha-Fe films. This provides an explanation for the magnetization switching upon discharging a capacitor in terms ...of the Oersted field generated by the discharge current. We analyze the ratio needed between the conductions of the FeO/FeOOH layer and the underlying alpha-Fe for the effective action of the Oersted field.
Извор:Journal of Materials Chemistry. C, 2016, 4, 33, 7751-7755
- Portuguese Foundation for Science and Technology (FCT) [PTDC/FIS/121588/2010], program Ciencia, FEDER, ON2, FCT through the Associated Laboratory - IN, FSE/POPH, FCT [SFRH/BD/101661/2014], Investigador FCT program, [POCI-01-0145-FEDER-016623], [PTDC/CTM-NAN/3146/2014], [EXPL/IF/00981/2013]
ISSN: 2050-7526 (print); 2050-7534 (electronic)