Effect of interface on mid-infrared photothermal response of MoS2 thin film grown by pulsed laser deposition
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Аутори
Goswami, AnkurDhandaria, Priyesh
Pal, Soupitak
McGee, Ryan
Khan, Faheem
Antić, Željka
Gaikwad, Ravi
Prashanthi, Kovur
Thundat, Thomas
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This study reports on the mid-infrared (mid-IR) photothermal response of multilayer MoS2 thin films grown on crystalline (p-type silicon and c-axis-oriented single crystal sapphire) and amorphous (Si/SiO2 and Si/SiN) substrates by pulsed laser deposition (PLD). The photothermal response of the MoS2 films is measured as the changes in the resistance of the MoS2 films when irradiated with a mid-IR (7 to 8.2 μm) source. We show that enhancing the temperature coefficient of resistance (TCR) of the MoS2 thin films is possible by controlling the film-substrate interface through a proper choice of substrate and growth conditions. The thin films grown by PLD are characterized using X-ray diffraction, Raman, atomic force microscopy, X-ray photoelectron microscopy, and transmission electron microscopy. The high-resolution transmission electron microscopy (HRTEM) images show that the MoS2 films grow on sapphire substrates in a layer-by-layer manner with misfit dislocations. The layer growth morph...ology is disrupted when the films are grown on substrates with a diamond cubic structure (e.g., silicon) because of twin growth formation. The growth morphology on amorphous substrates, such as Si/SiO2 or Si/SiN, is very different. The PLD-grown MoS2 films on silicon show higher TCR (−2.9% K−1 at 296 K), higher mid-IR sensitivity (ΔR/R = 5.2%), and higher responsivity (8.7 V·W–1) compared to both the PLD-grown films on other substrates and the mechanically exfoliated MoS2 flakes transferred to different substrates.
Кључне речи:
infrared (IR) detector / interface / MoS2 / photothermal effect / pulsed laser depositionИзвор:
Nano Research, 2017, 10, 10, 3571-3584Финансирање / пројекти:
- Canada Excellence Research Chair (CERC) program [SF0926]
Напомена:
- Preprint available at: https://arxiv.org/ftp/arxiv/papers/1607/1607.04682.pdf
- Erratum: https://doi.org/10.1007/s12274-017-1788-8
DOI: 10.1007/s12274-017-1568-5
ISSN: 1998-0124; 1998-0000
WoS: 000410304500027
Scopus: 2-s2.0-85021826025
Институција/група
VinčaTY - JOUR AU - Goswami, Ankur AU - Dhandaria, Priyesh AU - Pal, Soupitak AU - McGee, Ryan AU - Khan, Faheem AU - Antić, Željka AU - Gaikwad, Ravi AU - Prashanthi, Kovur AU - Thundat, Thomas PY - 2017 UR - https://vinar.vin.bg.ac.rs/handle/123456789/11870 AB - This study reports on the mid-infrared (mid-IR) photothermal response of multilayer MoS2 thin films grown on crystalline (p-type silicon and c-axis-oriented single crystal sapphire) and amorphous (Si/SiO2 and Si/SiN) substrates by pulsed laser deposition (PLD). The photothermal response of the MoS2 films is measured as the changes in the resistance of the MoS2 films when irradiated with a mid-IR (7 to 8.2 μm) source. We show that enhancing the temperature coefficient of resistance (TCR) of the MoS2 thin films is possible by controlling the film-substrate interface through a proper choice of substrate and growth conditions. The thin films grown by PLD are characterized using X-ray diffraction, Raman, atomic force microscopy, X-ray photoelectron microscopy, and transmission electron microscopy. The high-resolution transmission electron microscopy (HRTEM) images show that the MoS2 films grow on sapphire substrates in a layer-by-layer manner with misfit dislocations. The layer growth morphology is disrupted when the films are grown on substrates with a diamond cubic structure (e.g., silicon) because of twin growth formation. The growth morphology on amorphous substrates, such as Si/SiO2 or Si/SiN, is very different. The PLD-grown MoS2 films on silicon show higher TCR (−2.9% K−1 at 296 K), higher mid-IR sensitivity (ΔR/R = 5.2%), and higher responsivity (8.7 V·W–1) compared to both the PLD-grown films on other substrates and the mechanically exfoliated MoS2 flakes transferred to different substrates. T2 - Nano Research T1 - Effect of interface on mid-infrared photothermal response of MoS2 thin film grown by pulsed laser deposition VL - 10 IS - 10 SP - 3571 EP - 3584 DO - 10.1007/s12274-017-1568-5 ER -
@article{ author = "Goswami, Ankur and Dhandaria, Priyesh and Pal, Soupitak and McGee, Ryan and Khan, Faheem and Antić, Željka and Gaikwad, Ravi and Prashanthi, Kovur and Thundat, Thomas", year = "2017", abstract = "This study reports on the mid-infrared (mid-IR) photothermal response of multilayer MoS2 thin films grown on crystalline (p-type silicon and c-axis-oriented single crystal sapphire) and amorphous (Si/SiO2 and Si/SiN) substrates by pulsed laser deposition (PLD). The photothermal response of the MoS2 films is measured as the changes in the resistance of the MoS2 films when irradiated with a mid-IR (7 to 8.2 μm) source. We show that enhancing the temperature coefficient of resistance (TCR) of the MoS2 thin films is possible by controlling the film-substrate interface through a proper choice of substrate and growth conditions. The thin films grown by PLD are characterized using X-ray diffraction, Raman, atomic force microscopy, X-ray photoelectron microscopy, and transmission electron microscopy. The high-resolution transmission electron microscopy (HRTEM) images show that the MoS2 films grow on sapphire substrates in a layer-by-layer manner with misfit dislocations. The layer growth morphology is disrupted when the films are grown on substrates with a diamond cubic structure (e.g., silicon) because of twin growth formation. The growth morphology on amorphous substrates, such as Si/SiO2 or Si/SiN, is very different. The PLD-grown MoS2 films on silicon show higher TCR (−2.9% K−1 at 296 K), higher mid-IR sensitivity (ΔR/R = 5.2%), and higher responsivity (8.7 V·W–1) compared to both the PLD-grown films on other substrates and the mechanically exfoliated MoS2 flakes transferred to different substrates.", journal = "Nano Research", title = "Effect of interface on mid-infrared photothermal response of MoS2 thin film grown by pulsed laser deposition", volume = "10", number = "10", pages = "3571-3584", doi = "10.1007/s12274-017-1568-5" }
Goswami, A., Dhandaria, P., Pal, S., McGee, R., Khan, F., Antić, Ž., Gaikwad, R., Prashanthi, K.,& Thundat, T.. (2017). Effect of interface on mid-infrared photothermal response of MoS2 thin film grown by pulsed laser deposition. in Nano Research, 10(10), 3571-3584. https://doi.org/10.1007/s12274-017-1568-5
Goswami A, Dhandaria P, Pal S, McGee R, Khan F, Antić Ž, Gaikwad R, Prashanthi K, Thundat T. Effect of interface on mid-infrared photothermal response of MoS2 thin film grown by pulsed laser deposition. in Nano Research. 2017;10(10):3571-3584. doi:10.1007/s12274-017-1568-5 .
Goswami, Ankur, Dhandaria, Priyesh, Pal, Soupitak, McGee, Ryan, Khan, Faheem, Antić, Željka, Gaikwad, Ravi, Prashanthi, Kovur, Thundat, Thomas, "Effect of interface on mid-infrared photothermal response of MoS2 thin film grown by pulsed laser deposition" in Nano Research, 10, no. 10 (2017):3571-3584, https://doi.org/10.1007/s12274-017-1568-5 . .